Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

[method of fabricating polysilicon film]

a technology of polysilicon film and polysilicon array, which is applied in the direction of basic electric elements, electrical equipment, semiconductor devices, etc., can solve the problems of foregoing process problems, and achieve the effect of increasing output and effective improvemen

Inactive Publication Date: 2005-01-27
AU OPTRONICS CORP
View PDF2 Cites 33 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

[0016] Another object of the present invention is to provide a method of fabricating a poly-Si film, wherein an opening having a size sufficient for poly-Si thin film crystallization can be formed without precise control of process conditions, and thereby increasing the process window allowing greater process condition tolerance.
[0020] According to the foregoing description, it is noted that a proper deep sub-micron hole in the insulating layer is formed by sequentially forming an insulating layer, a a-Si layer and a cap layer over the substrate and then performing a laser annealing process without performing any photolithography and etching. Accordingly, process steps such as light exposure, photolithography and additional deposition as described above for forming an opening having a deep sub-micron feature can be effectively excluded. Thus, the throughput can also be effectively increased.

Problems solved by technology

However, problems in the foregoing process do exist, as described below.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • [method of fabricating polysilicon film]
  • [method of fabricating polysilicon film]
  • [method of fabricating polysilicon film]

Examples

Experimental program
Comparison scheme
Effect test

first embodiment

[0026] Referring to FIGS. 2A to 2E, show the cross sectional views illustrating the progression of the process of a method of fabricating a polysilicon (poly-Si) thin film according to the first embodiment of the present invention.

[0027] Referring to FIG. 2A, a substrate 200 is provided, wherein the material of the substrate 200 includes a silicon wafer, a glass substrate or a plastic substrate, for example. An insulating layer 202 is formed over the substrate 200, wherein the insulating layer 202 includes silicon dioxide can be formed by performing a conventional deposition process such as Low Pressure Chemical Vapor Deposition (LPVCD), Plasma Enhanced Chemical Vapor Deposition (PECVD) or sputtering. Thereafter a first a-Si layer 204, which can be formed by performing a conventional process such as LPVCD, PECVD or sputtering, is formed over the insulating layer 202. Further, a cap layer 206 is formed over the first a-Si layer 204, wherein the material of the cap layer 206 includes...

second embodiment

[0033] Referring to the FIGS. 3A to 3F, show the cross sectional views illustrating the progression of the process of a method of fabricating a poly-Si film according to a second embodiment of the present invention.

[0034] Referring to FIG. 3A, a substrate 300 is provided, wherein the material of the substrate 300 includes, for example, a silicon wafer, a glass or a plastic. An insulating layer 302 is formed over the substrate 300, wherein the material of the insulating layer 302 includes, for example, a silicon dioxide, and the insulating layer 302 can be formed by, for example, performing a conventional deposition process such as a LPVCD, a PECVD or a sputtering. Thereafter, a first a-Si layer 304 is formed over the insulating layer 302, by performing, for example, a LPCVD, PECVD or sputtering process.

[0035] Further, a cap layer 306 is formed over the first a-Si layer 304, wherein the material of the cap layer 306 includes temptemp, for example, silicon dioxide, and the cap layer...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

A method of fabricating polycrystalline silicon layer of TFT is provided. The method includes sequentially forming an insulating layer, a first amorphous silicon layer, and a cap layer on a substrate. A laser annealing is performed to transform the first amorphous silicon layer to a first polycrystalline silicon layer, wherein at least one hole is formed in the amorphous silicon layer during the laser annealing process. Thereafter, the cap layer is removed. A portion of the insulating layer exposed within the hole is removed to form a second opening. A second amorphous silicon layer is formed over the first polycrystalline silicon layer filling the second opening. Finally a second annealing is performed to transform the second amorphous silicon layer to a second polycrystalline silicon layer.

Description

CROSS REFERENCE TO RELATED APPLICATIONS [0001] This application claims the priority benefit of Taiwan application serial no. 92120193, filed Jul. 24, 2003. BACKGROUND OF INVENTION [0002] 1. Field of the Invention [0003] This invention relates to a method of fabricating Thin Film Transistor Liquid Crystal Display (TFT-LCD), and more particularly, relates to a method of fabricating a polysilicon film of TFT array in a TFT-LCD thereof. [0004] 2. Description of the Related Art [0005] An ordinary active TFT LCD array is generally categorized into polysilicon TFT and amorphous silicon TFT based materials used for making the TFT LCD, where a polysilicon (poly-Si) TFT being capable of integrating driving circuit thus provides a higher opening rate and lower fabrication cost than a corresponding amorphous silicon (a-Si) TFT. Another reason that polysilicon TFT technology is greatly promoted is that poly-Si TFT significantly reduces device feature size so that high image resolution can be ach...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L21/20H01L21/268H01L21/336H01L21/77H01L21/84
CPCH01L21/2022H01L21/2026H01L27/1285H01L29/6675H01L21/268H01L21/02686H01L21/02422H01L21/02488H01L21/02532H01L21/02381H01L21/02595
Inventor CHANG, MAO-YI
Owner AU OPTRONICS CORP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com