Multi-bit memory element with groove structure and method for manufacturing same

Abstract

A multi-bit memory element comprise a trench structure comprising an electrically conductive region on which is an insulating region in or on which are at least two floating gate regions that are electrically isolated from one another and from the electrically conductive region.

Description

technical field [0001] The invention relates to a multi-bit storage element with a trench structure and a method for manufacturing a multi-bit storage element with a trench structure. Background technique [0002] The most important subfield of semiconductor technology is the development of memory elements or memory cells (Memory Cells), ie elements for storing data, usually in the form of binary information units, ie bits (binary bits). In this regard, writing (Writing) or programming (Programming) a memory cell should be understood as "writing", ie storing, data (eg, a bit) into the cell. In addition, reading (Read) or deleting (Erase) a storage unit should be understood as reading or deleting the content of the storage unit, that is, the stored information. In addition, the read / write process is also called a cycle (Cycle), and the time between the start of one read / write process and the start of another read / write process is called a cycle duration (Cycle Time). [000...

AI Technical Summary

Problems solved by technology

The disadvantage of planar transistors is that the channel length of the transistor must be scaled with the feature size F (scalieren)

However, channels that are correspondingly shorter as devices are miniaturized have the problem that the channels are determined by high voltages that occur when programming or erasing cells

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