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Temperature correcting method in silicon sheet grade metal detection structure electromigration detection

A test structure and electromigration technology, which is applied in semiconductor/solid-state device testing/measurement, etc., can solve the problems of different final temperatures, inability to accurately extrapolate the electromigration life of metal test structures, etc., and achieve the effect of fast and accurate calculation

Inactive Publication Date: 2007-06-27
SHANGHAI INTEGRATED CIRCUIT RES & DEV CENT +1
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Problems solved by technology

However, since the initial resistance of each structure cannot be exactly the same, this results in that when the same current is applied, the final temperature of each structure is different, so that the electromigration lifetime of the metal test structure cannot be accurately extrapolated

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  • Temperature correcting method in silicon sheet grade metal detection structure electromigration detection

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Embodiment Construction

[0029] The electromigration test of silicon wafer-level metal test structure generally adopts a fixed accelerating current, and the temperature of the metal test structure is raised by the heat generated by the current. But because there are always subtle differences in each metal test structure, this leads to different temperatures for the same accelerating current.

[0030] The calculated electromigration lifetime in this case would be overly conservative due to the large dispersion of temperature, so it must be corrected reasonably.

[0031] The temperature correction method in the electromigration test of the silicon wafer-level metal test structure adopted in this embodiment mainly includes the following steps:

[0032] 1) Take a fixed accelerating current and rely on the heat generated by the current to increase the temperature of the metal test structure. The size of the fixed accelerating current should be selected according to the specific metal test structure, gener...

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Abstract

This invention relates to temperature modifying method in an electric migration test of a silicon chip level metal test structure, which modifies temperature of an actual test result so as to get an accurate metal electric migration life time value including: applying a fixed acceleration current to rise the temperature of the metal test structure relying on the heat generated by current, getting a set of test data T1-Tn and related invalid time t1-tn by measuring temperatures of multiple metal test structures, applying a data normalization way to take common temperature value T' of a set of the temperature values T1-Tn of the actual test structure as the parameter of a conversion formular to further get the invalid time t1'-tn' of the corresponding metal test structure so as to reflect the electric migration acceleration process corresponding to specific current in deed so as to extrapolate its life time quickly and accurately.

Description

technical field [0001] The invention belongs to the field of ultra-large-scale integrated circuit manufacturing, and relates to a temperature correction method for reliability evaluation of metal interconnection lines in the field, in particular to a temperature correction method used in the electromigration test of a silicon chip-level metal test structure. Background technique [0002] Electromigration of metal interconnects is one of the main failure mechanisms of microelectronic devices. Electromigration causes open and short circuits of metal interconnects, resulting in circuit failure. After the development of devices to sub-micron and deep sub-micron, the width of metal interconnection lines is continuously reduced, and the current density is continuously increased, making it easier to fail due to electromigration. Therefore, with the progress of the VLSI manufacturing process, people pay more and more attention to the evaluation of the anti-electromigration ability o...

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Application Information

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IPC IPC(8): H01L21/66
Inventor 万星拱卜皎
Owner SHANGHAI INTEGRATED CIRCUIT RES & DEV CENT
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