Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Monolithic integrated sensor chip for measing three parameters of pressure difference, absolute pressure and temperature and its making process

A sensor chip, monolithic integration technology, applied in piezoelectric/electrostrictive/magnetostrictive devices, semiconductor/solid-state device components, piezoelectric effect/electrostrictive or magnetostrictive motors, etc., to achieve performance Effects of stabilization, improved precision, and extended functions

Active Publication Date: 2007-06-06
SHENYANG ACAD OF INSTR SCI
View PDF0 Cites 26 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] In the world, the ST3000 sensor, which was first introduced by the American Honeywell Company in the 1980s, integrates three sensitive elements of differential pressure, static pressure and temperature on the same chip, and then combines the sensitive chip with CPU, EPROM, etc., from the digital Solve the static pressure compensation and temperature compensation problems of the sensor in terms of calculation, change the situation that the static pressure cannot be compensated, only rely on the process to solve, and the temperature compensation only depends on the hardware circuit, which significantly improves the measurement accuracy of the sensor, but the multi-parameter sensitivity of the ST3000 The sensitive diaphragm of the differential pressure unit in the element is a circular silicon cup formed by isotropic etching, and the static pressure unit has no sensitive diaphragm, and its 4 resistors are arranged on the periphery of the differential pressure circular diaphragm, which is only used for its differential pressure. Static pressure compensation of pressure sensors using

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Monolithic integrated sensor chip for measing three parameters of pressure difference, absolute pressure and temperature and its making process
  • Monolithic integrated sensor chip for measing three parameters of pressure difference, absolute pressure and temperature and its making process
  • Monolithic integrated sensor chip for measing three parameters of pressure difference, absolute pressure and temperature and its making process

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0019] With reference to the drawings, the structure of the monolithic integrated sensor chip with three parameters of differential pressure / absolute pressure / temperature of the present invention is: adopting SOI (100) crystal plane double-polished silicon monolithic wafer, as shown in Figure 1-3, with an area of ​​3.5×4.0mm 2 The middle part of the substrate of the silicon sensitive chip 1 forms two relatively independent differential pressure sensitive membrane cavity areas and absolute pressure sensitive diaphragm cavity areas: one area is made of four independent P-type silicon resistors on the front side as differential pressure The sensitive resistor 5 is distributed on the differential pressure sensitive diaphragm 10 formed by anisotropic corrosion technology along the [110] crystal direction stress concentration. The thickness of the diaphragm is 10-100um. The two ends of the resistance strip of the differential pressure sensitive resistor 5 are insulated A lead hole is op...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Resistanceaaaaaaaaaa
Thicknessaaaaaaaaaa
Login to View More

Abstract

The invention relates to a differential pressure / absolute pressure / temperature three parameter monolithic integrated sensor chip, wherein the chip structure includes a sensing resistor, silicon membrane and glass substrate, a relatively independent pressure difference sensing unit I and an absolute pressure sensing unit II are formed in the chip, and a temperature sensing unit III is arranged on a peripheral silicon substrate. The invention is characterized in that in the same chip three sensing units of differential pressure, absolute pressure and temperature are integrated, four raised independent P type silicon resistor strips are respectively distributed on fronts of the differential pressure sensing unit I and the absolute pressure sensing unit II, namely a differential pressure resistor (5) and an absolute pressure resistor (6), and one raised silicon resistor strip, namely a temperature sensing resistor (7), is respectively distributed on the temperature sensing unit III. The inventive method makes the performance of the differential pressure / absolute pressure / temperature three parameter sensor to be reliable, the cost to be lowered, so that the batch production is realized. The measurement of pressure, differential pressure and temperature under a high wide temperature environment is solved.

Description

Technical field [0001] The invention belongs to the technical field of microelectronics and micromechanical processing fusion, and relates to a single-chip integrated sensor chip with three parameters of differential pressure / absolute pressure / temperature and a preparation method thereof. Background technique [0002] Sensor technology is currently one of the fastest growing high-tech in the world, and its production capacity and application level determine the development speed of information technology and industrial automation technology. The development of high-performance, high-reliability, multi-parameter and intelligent sensors has become an urgent need for industrial control systems. Sensors are developing to a new height, and a large number of new technologies are adopted to realize intelligence, miniaturization, precision, and multi-parameterization. [0003] The current domestic research on sensor integration includes: integrating the sensitive chip and the processing ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): B81B7/02G01L1/18G01K7/16B81C1/00B81C3/00B81C5/00B81C99/00
Inventor 唐慧陈信琦李长春祝永峰
Owner SHENYANG ACAD OF INSTR SCI
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products