Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Gas supplying unit and substrate processing apparatus

A substrate processing device and gas supply technology, applied in the direction of spraying devices, spraying devices, electrical components, etc., can solve the problems of heat generation affecting the temperature detection value, unstable temperature control, etc.

Active Publication Date: 2007-05-09
TOKYO ELECTRON LTD
View PDF1 Cites 14 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, although there is a practice of providing an insulating material between the base member 11 and the temperature detection part, there is a risk that the heat generated by the induction heating of the insulating material will affect the temperature detection value, resulting in unstable temperature control.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Gas supplying unit and substrate processing apparatus
  • Gas supplying unit and substrate processing apparatus
  • Gas supplying unit and substrate processing apparatus

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0032] An embodiment in which the gas supply device of the present invention is incorporated in a film formation apparatus for film formation by plasma CVD will be described. First, the overall structure of the film forming apparatus will be briefly described based on the schematic diagram of FIG. 1 . In FIG. 1, 2 is a processing container as a vacuum chamber made of, for example, aluminum, and the processing container 2 is formed to be composed of an upper large-diameter cylindrical portion 2a and a lower small-diameter cylindrical portion 2b in communication with each other. The so-called mushroom shape is provided with an unillustrated heating mechanism for heating the inner wall. In the processing container 2, there is provided a stage 21 constituting a substrate mounting table for horizontally mounting, for example, a semiconductor wafer (hereinafter referred to as a wafer) W as a substrate. The stage 21 is supported by a support member 22 at the bottom of the small-diam...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention relates to a gas supplying unit to be arranged to hermetically fit in an opening formed at a ceiling part of a processing container for conducting a process to a substrate. The gas supplying unit includes a plurality of nickel members. A large number of gas-supplying holes is formed at a lower surface of the gas supplying unit, a process gas is adapted to be supplied from the large number of gas-supplying holes into the processing container, and the plurality of nickel members is fixed to each other via an intermediate member for preventing sticking made of a material different from nickel.

Description

technical field [0001] The present invention relates to, for example, a gas supply device for supplying processing gas into a processing chamber from a plurality of gas supply holes facing a substrate in order to perform a predetermined film-forming process on a substrate, and a substrate processing apparatus using such a gas supply device. Background technique [0002] The film formation process is one of the semiconductor manufacturing processes, and this process is usually performed in a vacuum atmosphere by activating the process gas by, for example, plasma or pyrolysis to deposit active species or reaction products on the surface of the substrate. Therefore, in the film forming process, there is a process of causing a plurality of gases to react to form a film. As this treatment, metals such as Ti, Cu, Ta, or metal compounds such as TiN, TiSi, WSi, etc., or SiN, SiO 2 Formation of thin films such as insulating films. [0003] An apparatus for performing such a film fo...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): B05B1/14C23C16/448C23C14/00C23F4/00H01L21/02
CPCC23C16/45565C23C16/4557C23C16/45572H01J37/3244H01J37/32449H01L21/3065H01L21/304
Inventor 五味久齐藤哲也挂川崇间瀬贵久小泉真多田国弘若林哲成嶋健索方成
Owner TOKYO ELECTRON LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com