Method of dielectric barrier discharge plasma hot wire chemical gaseous phase deposition and its device

Abstract

The invention discloses a method and device of plasma heater chemical vapour deposition to bring plasma by dielectric-trap discharging. It is characterized in that: Zero equipotential planes supplied by wire netting is taken as zero potential electrode of dielectric-trap discharging. Heater is on the other side of wire netting, which realizes the separation of plasma zone and heater zone. Substrate below the heater is far away from plasma to avoid high-energy ion bombard. Compared with direct current, radio-frequency and microwave plasma, dielectric-trap discharging has strongpoint including simple device, low cost and small power consumption etc. The method and device can efficiently increase film sedimentation rate and film quality. The invention is applicable for preparation of polycrystal / amorphous Si, SiC, diamond, nanophase diamond and C nanophase tube.

Description

technical field [0001] The invention belongs to the technical field of chemical vapor deposition, and relates to a dielectric barrier discharge plasma hot wire chemical vapor deposition method and device. Background technique [0002] Plasma Enhanced Chemical Vapor Deposition Applied to SiO 2 , SiN, polysilicon / amorphous silicon, diamond and other thin film materials have been prepared for many years. It dissociates or excites the reactive particles through an electric field to form a plasma, and uses the abundant active particles in it to realize the low temperature deposition of various thin films. It is widely used in the preparation of microelectronic films and the development of new functional films. But its deposition rate is low, generally only 1-3 Ȧ / s, and the high-energy particles in it often cause certain damage to the film. Hot wire chemical vapor deposition uses the catalysis of hot wire to decompose gas phase reactants into active particles to obtain thin film...

AI Technical Summary

Problems solved by technology

These methods all intersect the plasma area and the hot wire area. The introduction of the hot wire into the plasma will seriously affect the stability and uniformity of the plasma, and the life of the hot wire will be reduced by the impact of the plasma. At the same time, the high energy in the plasma The problem that ion bombardment grows thin films and affects the quality of thin films has not been resolved

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