Nonvolatile memory unit, manufacturing method, and opertion method

Abstract

The non-volatile memory includes substrate, selection grid electrode, two charge storage layers, two regions of source electrode / drain electrode and control grid electrodes. At least two grooves are setup in the substrate. The selection grid electrode is setup on substrate between the two grooves. Two charge storage layers are setup at sidewalls of the selection grid electrodes adjacent to two grooves respectively. Two regions of source electrode / drain electrode are setup on substrate of base of two grooves. Being setup on substrate, selection grid electrode is filled to two grooves.

Description

technical field [0001] The invention relates to a semiconductor element, in particular to a non-volatile memory and its manufacturing method and operation method. Background technique [0002] Among all kinds of non-volatile memory products, it has the advantages of multiple data storage, reading, erasing, etc., and the stored data will not disappear after power off. Program read-only memory (EEPROM) has become a memory element widely used in personal computers and electronic equipment. [0003] A typical EEPROM uses doped polysilicon to make a floating gate (Floating Gate) and a control gate (Control Gate). Moreover, the floating gate is separated from the control gate by a dielectric layer, and the floating gate is separated from the substrate by a tunneling oxide layer. When writing / erasing (Write / Erase) data to the flash memory, by applying a bias voltage to the control gate and the source / drain region, electrons are injected into the floating gate or electrons are rel...

AI Technical Summary

Problems solved by technology

[0006] However, since the split gate structure requires a larger split gate area and has a larger memory cell size, its memory cell size is larger than that of a memory cell with a stacked gate, which causes the problem of not being able to increase the integration of components.

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