Static random access memory and operation method

Abstract

A storage of static random access is prepared as forming the first access transistor by bottom dielectric layer, electric charge blocking layer, top dielectric layer and grid; using electric charge blocking layer to store data of said storage for holding data not to be disappeared when power supply is interrupted, starting up the first inverter selectively as per operation of the second access transistor and starting up the second inverter selectively as per operation of the first access transistor.

Description

technical field [0001] The present invention relates to a semiconductor device, and in particular to a static random access memory and its operating method. Background technique [0002] Random access memory devices can be mainly classified into dynamic random access memory (DRAM) and static random access memory (SRAM). The advantages of the SRAM are fast operation and low power consumption. Compared with the DRAM, the SRAM does not need to be periodically charged and updated, and is relatively simple in design and manufacture. Therefore, SRAM is widely used in information electronic products. [0003] Since the SRAM is a volatile memory, it stores data in the conduction state of the transistors in the memory cells. Therefore, when the power supply to the memory is removed, the data stored in the SRAM will completely disappear. [0004] On the other hand, electrically erasable and programmable read-only memory (EEP 2 PROM) has the advantage of being able to store, read, ...

AI Technical Summary

Problems solved by technology

Therefore, when the power supply to the memory is removed, the data stored in the SRAM will completely disappear

Images