Preparation method of InP quantum point

A quantum dot, transparent technology, applied in the field of compound semiconductor nanomaterial preparation, can solve the problems affecting the research of III-V semiconductor nanomaterials, strict preparation conditions and operation requirements, restricting the development of semiconductor devices, etc., and achieves low equipment cost and uniform size. , the effect of eliminating the influence

Inactive Publication Date: 2007-02-14
HUAZHONG UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

In this field, Nozik and Micic have made significant contributions. They have synthesized some III-V colloidal quantum dots, but the quality is poor compared with II-VI quantum dots. The best results are limited to InP colloidal quantum dots. Moreover, the preparation conditions and operation requirements are strict
These will seriously affect the research on III-V semiconductor nanomaterials and restrict the development of semiconductor devices

Method used

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  • Preparation method of InP quantum point
  • Preparation method of InP quantum point
  • Preparation method of InP quantum point

Examples

Experimental program
Comparison scheme
Effect test

example 1

[0037] (1) Rough quantum dot synthesis stage:

[0038] (1.1) Weigh 0.7g InCl in a three-necked flask 3 And 10g TOPO, through argon to exhaust the air, heated to 100°C under argon atmosphere to form a colorless transparent solution, this solution was maintained at 100°C for 12 hours.

[0039] (1.2) Raise the temperature of the solution in the flask to 150° C., and blow argon into the solution for 10 minutes.

[0040] (1.3) Measure 0.6mL P(Si(CH 3 ) 3 ) 3 (0.002mol), quickly injected into the flask.

[0041] (1.4) The temperature of the reaction solution in the flask was slowly raised to 265° C., and maintained at this temperature for 6 days.

[0042] (1.5) The temperature of the solution is lowered to 100° C., inject 0.5 mL of dodecylamine, and keep at this temperature for 3 days. Remove the argon protection.

[0043] (2) Separation and purification stage:

[0044] (2.1) Add toluene equal to the volume of the solution in the bottle to the reaction flask, and all the sub...

example 2

[0053] (1) Rough quantum dot synthesis stage:

[0054] (1.1) Weigh 0.3g InCl in a three-necked flask 3 And 10g TOPO, through argon to exhaust the air, heated to 110°C under argon atmosphere to form a colorless transparent solution, this solution was maintained at 110°C for 10 hours.

[0055] (1.2) Raise the temperature of the solution in the flask to 170° C., and blow argon into the solution for 12 minutes.

[0056] (1.3) Measure 0.3mL P(Si(CH 3 ) 3 ) 3 (0.001mol), quickly injected into the flask.

[0057] (1.4) The temperature of the reaction solution in the flask was slowly raised to 270° C. and maintained at this temperature for 3 days.

[0058] (1.5) The temperature of the solution is lowered to 80° C., inject 0.4 mL of dodecylamine, and keep at this temperature for 2 days. Remove the argon protection.

[0059] (2) Separation and purification stage:

[0060] This stage is exactly the same as in Example 1.

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Abstract

The invention discloses an InP quantum point preparing method, comprising the steps of: (1) mixing InCl3 with trioctylphosphine oxide, and preserving heat at 90-110DEG C to prepare a solution whose In content is 0.1-0.3mol/L; (2) raising temperature to 130-180DEG C, and charging argon gas; (3) injecting P(Si(CH3)3)3 into InCl3-TOPO compound in the molar ratio of 1 to 1-1 to 2; (4) when the solution color turns into transparent red or orange, raising temperature to 260-270DEG C and preserving heat; (5) lowering temperature to 90-110DEG C and injecting dodecyl amine, decyl amine or mercaptan; (6) dissolving reacting mixture in nonpolar solvent to form transparent colloidal solution, then adding in polar solution until the colloidal solution is muddy, and centrifugally separating and obtaining deposits and supernatant; and (7) centrifugally separating the supernatant, where the above steps (1)-(5) are performed. And it has characters of high crystallizability, uniform size, and good optical properties.

Description

technical field [0001] The invention belongs to the technical field of preparation of compound semiconductor nanometer materials, and in particular relates to a preparation method of InP quantum dots. Background technique [0002] When the size of semiconductor material particles is equivalent to the exciton Bohr radius or the De Broglie wavelength of electrons (<100nm), such particles can be called quantum dots (Quantum dots, QDs) or nanocrystals (Nanocrystals), which The scale is between macroscopic solids and microscopic atoms and molecules, with a typical size of 1-10nm, containing dozens to tens of thousands of atoms. At this time, quantum dots will show quantum confinement effects, and the electronic structure will also change. The most notable is The forbidden band widens, and the electronic density of states presents a discrete "quantized" energy level structure similar to atoms. [0003] When the particle size enters the nanometer level, the movement of carriers...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C09K11/70
Inventor 张道礼张建兵吴启明袁林
Owner HUAZHONG UNIV OF SCI & TECH
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