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Method for using special chelant for micro electronic

A chelating agent and microelectronics technology, applied in the field of microelectronics, can solve the problem that the content of metal ions cannot be effectively reduced, etc.

Inactive Publication Date: 2007-01-03
HEBEI UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] (4) only suitable for alkaline solution
Because the chelating agent complexes with the metal ions on the surface of the wafer, and due to the reduction of silicon, a part of the metal ions are reduced to atoms and exist on the surface of the wafer, so that the effect of the chelating agent cannot be fully exerted, so the substrate surface After processing, its metal ion content cannot be effectively reduced

Method used

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  • Method for using special chelant for micro electronic

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0024] Put the grinding disc into the polishing machine, add 0.1% microelectronic special chelating agent diethylenediaminetetraacetic acid tetrahydroxyethylethylenediamine salt in the common polishing liquid by volume percentage, the polishing liquid is alkaline, and the pH is 13. Then polish according to the conventional polishing method.

[0025] Then put the above-mentioned polishing sheet into the cleaning tank, add 0.1% of microelectronic special chelating agent diethylenediaminetetraacetic acid tetrahydroxyethylethylenediamine salt into the cleaning agent, and 1% of hydrogen peroxide as the oxidizing agent, and then follow the routine The cleaning method is used for cleaning to obtain a clean wafer.

Embodiment 2

[0027] Put the grinding piece into the polishing machine, the polishing liquid is acidic, and the pH value is 1, add 3% microelectronic special chelating agent diethylenediaminetetraacetic acid tetrahydroxyethylethylenediamine salt in the above polishing liquid by volume percentage , and 1% hydrogen peroxide as an oxidizing agent, and then polished according to conventional polishing methods.

[0028] Then put the above-mentioned polishing sheet into the cleaning tank, add 3% of microelectronics special chelating agent diethylenediaminetetraacetic acid tetrahydroxyethylethylenediamine salt into the cleaning agent, and 3% of hydrogen peroxide as the oxidizing agent, and then follow the routine The cleaning method is used for cleaning to obtain a clean wafer.

Embodiment 3

[0030] Put the grinding disc into the polishing machine, the polishing liquid is acidic, and the pH value is 3, add 1% microelectronic special chelating agent diethylenediaminetetraacetic acid tetrahydroxyethylethylenediamine salt in the above polishing liquid by volume percentage , and 2% hydrogen peroxide as an oxidizing agent, and then polished according to conventional polishing methods.

[0031] Then put the above-mentioned polishing sheet into the cleaning tank, add 1% special chelating agent diethylenediaminetetraacetic acid tetrahydroxyethylethylenediamine salt in the cleaning agent, and 5% hydrogen peroxide as the oxidizing agent, and then follow the routine The cleaning method is used for cleaning to obtain a clean wafer.

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Abstract

The present invention provides micro-electronics special used chelating agent uses method for effectively removing metal ion on base material surface. It contains adding 0.1-3 per cent micro-electronics special chelating agent diethylenediamine tetraacetic acid tetrahydroxy ethyl ethylene diamine in usual polishing solution by volume, if polishing solution being basicity then polishing; if polishing solution being acidity then adding 1-5 per cent oxyful in above-mentioned polishing solution then polishing; putting above-mentioned polished section in purge tank and adding 0.1-3 per cent micro-electronics special chelating agent diethylenediamine tetraacetic acid tetrahydroxy ethyl ethylene diamine in cleaning agent by volume percentage, and 1-5 per cent oxyful, then to make cleaning. The present invention can oxidize metal atom existing chip surface to metal ion and fully chelating with chelating agent, thereby to obtain removing.

Description

technical field [0001] The present invention relates to the field of microelectronics, and more specifically relates to a special chelating agent for microelectronics, diethylenediaminetetraacetic acid tetrahydroxyethylethylenediamine salt, which can effectively remove metals in surface ultra-precision processing such as microelectronic polishing and cleaning. How to use ions. Background technique [0002] With the development of ultra-large-scale integrated circuits, the integration level continues to increase, the feature size of devices continues to decrease, and the requirements for the surface cleanliness of silicon substrates are also more stringent. The importance of silicon wafer cleaning in the semiconductor industry has long attracted people's attention. , VLSI process requires no more than 500 adsorbates / m on the provided substrate 2 ×0.12μm, metal pollution is less than 1010atom / cm 2 . Heavy metals (mainly from knives) are called "deep energy level impurities"...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/302H01L21/304H01L21/306C07D487/22
Inventor 刘玉岭李广福张西慧
Owner HEBEI UNIV OF TECH
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