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Semiconductor surface protecting sheet and method

A semiconductor and solid-state technology, applied in semiconductor/solid-state device manufacturing, working carriers, machine tools suitable for grinding workpiece planes, etc., can solve problems such as guard plate remelting

Inactive Publication Date: 2006-12-20
3M INNOVATIVE PROPERTIES CO
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

As a result, problems caused by the temperature rise generated during such a step include remelting of the shield

Method used

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  • Semiconductor surface protecting sheet and method
  • Semiconductor surface protecting sheet and method
  • Semiconductor surface protecting sheet and method

Examples

Experimental program
Comparison scheme
Effect test

example

[0047] 1. Manufacture and testing of protective layer compositions for surface guards and guards

example 1

[0050] Example 1 (ultraviolet curing solid protective layer)

[0051] Chemical name

example 2

[0052] Example 2 (ultraviolet curing solid protective layer)

[0053] Chemical name

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Abstract

Provided are a semiconductor surface protecting method and surface protecting sheet employing a material having adequate conformability for irregularities on semiconductor wafer circuit sides and sufficient rigidity as a support during grinding, and which does not become fluid with repeated temperature increases. Also provided is a surface protecting sheet for protection of the circuit side in the step of back side grinding of a semiconductor wafer, the surface protecting sheet having a polymeric film material with a surface protecting layer thereon that may become fluid upon heating and which hardens upon exposure to radiation or upon heating.

Description

field of invention [0001] The invention relates to a semiconductor surface protection method and a surface protection plate, which are used to protect the circuit-containing side of a semiconductor wafer during wafer backside grinding. More specifically, the present invention relates to a semiconductor surface protection method and surface guard that allow ultra-thin backside grinding of semiconductor wafers, or that allow backside grinding of semiconductor wafers with high protrusions such as solder bumps on the circuit side. Background technique [0002] Thinning (also referred to herein as "grinding") of semiconductor wafers is typically accomplished by a "backside grinding" process in which the circuit side of the wafer is protected by a surface guard and the backside opposite the circuit side is ground. The thickness of a silicon wafer is typically 150 μm on an industrial scale, but thinner wafer thicknesses are desirable. As the wafer is ground to a smaller thickness,...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/68C09J7/02B24B7/22B24B37/30B24B55/00C09J7/22C09J7/35H01L21/00H01L21/304
CPCB24B55/00C09J2461/00C09J2463/00C09J7/0242B24B7/228H01L21/67132C09J7/35C09J7/22H01L21/304H01L21/48
Inventor 野田一树
Owner 3M INNOVATIVE PROPERTIES CO
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