Multi-wavelength LED structure and making process thereof

A light-emitting diode, multi-wavelength technology, used in semiconductor devices, electrical components, circuits, etc., can solve the problems of yellow halo, inaccuracy, and unpredictable color shift.

Inactive Publication Date: 2006-09-27
TAIWAN OASIS TECH CO LTD
View PDF0 Cites 5 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] figure 1 The multi-wavelength light-emitting diodes shown generally use blue chips to excite the yellow phosphor powder 51 mixed in the fluorescent glue 50 to produce "pseudo-white light" that looks like white light, but because similar multi-wavelength light-emitting diodes only transmit a single color The fluorescent powder is used as the complementary light excited by the light-emitting chip, resulting in poor color and yellow halo phenomenon of the formed "pseudo-white light"; as a result, the industry has also developed such figure 2 Shown is a multi-wavelength light-emitting diode structure in which two phosphors are mixed in the fluorescent glue. This type of multi-wavelength light-emitting diode generally uses a blue chip to excite the red phosphor 52 and the green phosphor 53 mixed in the fluorescent glue 50, In order to combine the red and green colors with the blue light of the light-emitting chip 10 to achieve the light mixing effect of the three primary colors and produce a light color close to white light with higher color rendering; The ratio is not easy to control, and the quality of the finished product cannot be effectively controlled. In addition, different phosphors are excited by the light source of the light-emitting chip at the same time, which will cause interference, that is, the energy of phosphors with shorter wavelengths will partially excite wavelengths. Longer phosphor absorbs and consumes, and its consumption rate cannot be estimated, so that unexpected color shift occurs, and the expected light color cannot be accurately presented, and because the short-wavelength phosphor emits wavelength after being excited by the light-emitting chip Slightly longer light waves, in addition to participating in light mixing to produce white light, this slightly longer wavelength light will re-excite phosphors with longer emission wavelengths, reducing luminous efficiency, and thus resulting in lower luminous brightness

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Multi-wavelength LED structure and making process thereof
  • Multi-wavelength LED structure and making process thereof
  • Multi-wavelength LED structure and making process thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0024] In order to make the composition and implementation of the present invention clear to your examiner, the description is as follows in conjunction with the drawings:

[0025] The "multi-wavelength light-emitting diode structure and its manufacturing process" of the present invention, the basic structure of the overall multi-wavelength light-emitting diode is as follows image 3 As shown, the light-emitting chip 10 is also fixed in a carrier 20 by using the crystal-bonding glue 40, and the connection between the light-emitting chip 10 and the electrode terminal 21 is formed by using the gold wire 30, and the light-emitting chip 10 is fixed by the fluorescent glue 50 having a fluorescent material. Covering is used to make the light source of the light-emitting chip excite the fluorescent material of the fluorescent glue 50 under the power-on effect of the light-emitting chip 10, so as to form a desired light color.

[0026] Among them, the overall multi-wavelength light-em...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

This invention arranges at least one fluorescence material with fixed wavelength at the bottom and above the periphery of the luminous chip, when the luminous chip electrifies, it actives the luminous chip to form colored light with high luminous efficient, which can avoid disturbance, and because the fluorescence material's deal and proportion of different parts are easy to control, so this method is benefit for controlling the quality of the multi-wavelength radiation dipolar and its production.

Description

technical field [0001] The invention relates to the luminous efficiency and light color performance technology of light-emitting diodes, aiming to provide a multi-wavelength light-emitting diode structure and manufacturing process capable of producing high luminous efficiency and accurate gloss. Background technique [0002] Such as figure 1 As shown, it is a schematic diagram of the basic structure of a conventional multi-wavelength light-emitting diode. This multi-wavelength light-emitting diode uses a die-bonding glue 40 to fix the light-emitting chip 10 in a bowl-shaped carrier 20, and uses gold wires 30 to form a light emitting diode. The chip 10 is connected to the electrode terminal 21, and the light-emitting chip 10 is coated with the fluorescent glue 50 having phosphor powder, so that the light source of the light-emitting chip excites the phosphor powder of the fluorescent glue 50 under the power-on action of the light-emitting chip 10, so as to form the desired l...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): H01L33/00H01L33/50
Inventor 李明顺何昌纬
Owner TAIWAN OASIS TECH CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products