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Pyramid-shaped capacitor structure and method of manufacturing thereof

A capacitor structure and metal technology, applied in capacitors, circuits, electrical components, etc., can solve the problems of product lack and inconvenience, and achieve the effect of reducing edge collapse and widely using value

Inactive Publication Date: 2006-09-13
TAIWAN SEMICON MFG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0010] It can be seen that the above-mentioned existing capacitor structure and its manufacturing method obviously still have inconvenience and defects in structure, method and use, and need to be further improved urgently.
In order to solve the problems existing in the capacitor structure and its manufacturing method, the relevant manufacturers have tried their best to find a solution, but no suitable design has been developed for a long time, and there is no suitable structure for general products to solve the above problems. , this is obviously a problem that relevant industry players are eager to solve

Method used

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  • Pyramid-shaped capacitor structure and method of manufacturing thereof
  • Pyramid-shaped capacitor structure and method of manufacturing thereof
  • Pyramid-shaped capacitor structure and method of manufacturing thereof

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Embodiment Construction

[0050] For further elaborating the technical means and effect that the present invention takes for reaching the intended invention purpose, below in conjunction with accompanying drawing and preferred embodiment, to the specific implementation manner, structure of the pyramid-shaped capacitance structure and manufacturing method thereof that proposes according to the present invention , production method, steps, features and effects thereof are described in detail as follows.

[0051] The present invention proposes a capacitive structure with a generally pyramidal or stepped profile. The capacitor structure includes a lower conductive layer, an upper conductive layer, and at least one dielectric layer between the lower conductive layer and the upper conductive layer. The surface area of ​​the dielectric layer is greater than the surface area of ​​the upper conductive layer. This reveals that the above-mentioned capacitor structure has a stepped profile, which can promote the ...

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Abstract

The invention relates to a pyramidal capacitor structure and its manufacturing method. The capacitor structure which has a generally pyramidal or stepped profile is aimed to prevent or reduce dielectric layer breakdown. The capacitor structure includes a first conductive layer, at least one dielectric layer having a first area provided on the first conductive layer and a second conductive layer provided on the at least one dielectric layer. The second conductive layer has a second area which is less than the first area of the at least one dielectric layer. A method of fabricating a capacitor structure is also disclosed.

Description

technical field [0001] The present invention relates to a semiconductor device, and more particularly to a generally pyramid-shaped capacitor structure characterized by relatively high resistance to edge breakdown in semiconductor devices. Background technique [0002] In the manufacture of semiconductor integrated circuits, metal conductor lines are used to interconnect (Interconnect) multiple components in the component circuits on the semiconductor wafer. The general process used to deposit a metal conductor pattern on a semiconductor wafer includes: depositing a conductor layer on a silicon wafer substrate; using standard lithography techniques to form a photoresist or other masks, such as titanium oxide or silicon oxide; subjecting the wafer substrate to a dry etch process to remove the conductor layer from areas not covered by the mask, leaving a masked metal layer in the form of a conductor line pattern; and Typically, reactive plasma and chlorine gas are used to rem...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/92H01L27/00H01L27/04H01L27/10H01L27/108H01L21/00H01L21/02H01L21/82H01L21/8242H10B12/00
CPCH01L28/60
Inventor 黄坤铭汪业杰
Owner TAIWAN SEMICON MFG CO LTD
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