Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

In-situ treatment method of sapphire substrate for preparation of high-quality zinc oxide film

A zinc oxide thin film and sapphire substrate technology, which is applied in semiconductor/solid-state device manufacturing, ion implantation plating, coating, etc., can solve problems such as slow growth rate, difficult process control, and increased electron concentration in the background of zinc oxide thin film

Inactive Publication Date: 2006-06-21
INST OF PHYSICS - CHINESE ACAD OF SCI
View PDF0 Cites 9 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Since the thickness of the magnesium oxide buffer layer has a great influence on the polarity of the zinc oxide epitaxial film (H.Kato, et al, Appl.Phys.Lett.84, 4562 (2004)), in order to obtain high-quality zinc oxide film, The thickness of magnesium oxide needs to be strictly controlled, the growth rate is very slow and the uniformity is not easy to guarantee, and it is difficult to be practically applied
The process of depositing two thin gallium layers is more difficult to control
In addition, gallium is a shallow donor impurity in zinc oxide, and the diffusion of gallium leads to a significant increase in the background electron concentration of zinc oxide thin films, which is very unfavorable for the preparation of p-type thin films

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • In-situ treatment method of sapphire substrate for preparation of high-quality zinc oxide film
  • In-situ treatment method of sapphire substrate for preparation of high-quality zinc oxide film
  • In-situ treatment method of sapphire substrate for preparation of high-quality zinc oxide film

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0026] Such asfigure 1 As shown in the process flow diagram of the present invention, on the sapphire (0001) substrate, the specific steps for preparing high-quality ZnO single crystal film are as follows by utilizing oxygen plasma treatment and metal lithium interfacial layer modification technology:

[0027] 1) Plating molybdenum on the back of a commercially available sapphire (0001) substrate by a known method, cleaning it, and then introducing the substrate into a molecular beam epitaxy growth system;

[0028] 2) Perform radio frequency oxygen plasma treatment at a low temperature of 200°C for about 30 minutes, the radio frequency power is 400W, and the oxygen flow rate is 2.0 sccm to obtain an oxygen-terminated sapphire (0001) substrate; the purpose of choosing a low temperature is to prevent surface oxygen atoms from desorption;

[0029] 3) At air pressure -6 When the Pa and the substrate temperature are 80°C to deposit metallic lithium, the equivalent vapor pressure of...

Embodiment 2

[0035] Such as figure 1 Shown process flow diagram of the present invention, on sapphire (0001) substrate utilizes oxygen plasma treatment and metal magnesium interfacial layer modification surface to prepare the concrete steps of high-quality ZnO single crystal thin film as follows:

[0036] 1) Plating molybdenum on the back of a commercially available sapphire (0001) substrate by a known method, and cleaning, and then introducing the substrate into a molecular beam epitaxy growth system;

[0037] 2) Perform radio frequency oxygen plasma treatment at 80°C for about 30 minutes, the radio frequency power is 350W, and the oxygen flow rate is 2.5 sccm to obtain a sapphire (0001) substrate with an oxygen terminated surface. The purpose of choosing a low temperature is to prevent surface oxygen atoms from desorption;

[0038] 3) At air pressure -6 When the Pa and the substrate temperature are 80°C to deposit metallic magnesium, the equivalent vapor pressure of the magnesium beam i...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses blue stone underlay handling method, using the P-MBE device to treat blue stone underlay by three steps. The method comprises the following steps: plasma treating the underlay at the low temperature, then depositing the lithium or magnesium at low temperature and ultra high vacuum, finally carrying out annealing treatment to get blue stone surface modified by lithium oxide or magnesium oxide. The method improves the crystallization quality of zinc oxide epitaxial film. The zinc oxide film made on the modification surface of blue stone possesses the good optical property and suits for high-performance opto-electronic device.

Description

technical field [0001] The invention relates to an in-situ treatment method for a sapphire substrate used for the preparation of a high-quality zinc oxide film, especially the in-situ oxygen plasma treatment on the sapphire (0001) surface and the metal lithium or magnesium thin layer under ultra-high vacuum conditions Deposition and re-evaporation methods to control surface and interface processes. It belongs to the field of semiconductor materials. Background technique [0002] As the third-generation wide-bandgap semiconductor material, ZnO has many excellent properties, such as piezoelectricity, transparent conductivity, gas sensitivity and other physical properties, making it widely used in transparent conductive films, surface acoustic wave devices, piezoelectric ceramics and gas sensors. Has a wide range of applications. At the same time, ZnO is also a direct transition type II-VI semiconductor, which has very superior photoelectric properties. The band gap of 3.37e...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): C23F17/00C23C8/36C23C14/16H01L21/00
Inventor 袁洪涛杜小龙曾兆权薛其坤贾金锋
Owner INST OF PHYSICS - CHINESE ACAD OF SCI
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com