Solid-state imaging device

A technology of solid-state imaging devices and components, which is applied in the direction of electrical components, image communication, color TV components, etc., can solve the problems of high-light area dynamic range and contrast reduction, less wide dynamic range, display discontinuity characteristics, etc., to achieve Realize the effect of wide dynamic range and high use value

Inactive Publication Date: 2006-05-24
PANASONIC CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0009] However, existing solid-state imaging devices that show figure 1 The combined output α0 of the main light-sensing part 901 and the slave light-sensing part 902 shows a discontinuous characteristic at the moment of light amount A, and can only rarely achieve wide dynamic range
For this reason, the dynamic range and contrast of the highlight area of ​​the frame image are reduced

Method used

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0066] image 3 It is a circuit diagram showing the structure of the solid-state imaging device according to Embodiment 1 of the present invention. Also, although multiple photoelectric conversion units are provided in the row direction and column direction, image 3 Only one of them is shown in.

[0067] Such as image 3 As shown, the solid-state imaging device 1 includes a pixel portion 10, a MOS transistor Q21, a noise signal removal portion 30, a MOS transistor Q41, a pulse generating circuit 50a, a signal processing portion 60, a power supply line L10, a reset pulse application signal line L11, and a transmission pulse Application signal line L12, row selection pulse application signal line L13, column direction common signal line L14, sample and hold pulse application signal line L15, capacitor initialization pulse application signal line L16, capacitor initialization bias application line L17, horizontal selection pulse application The signal line L18, and the horizontal o...

Embodiment 2

[0106] Next, a description will be given of an operation in a case where the electric charge at the high light amount and the electric charge at the normal light amount are respectively output from the floating diffusion FD to the column direction common signal line L14.

[0107] Figure 8 It is a timing chart showing the timing of operating the solid-state imaging device 1 according to Embodiment 2 of the present invention.

[0108] In addition, in the figure, Figure 8 (a)~ Figure 8 (c) respectively indicate the reset pulse RS, the transfer pulse TRAN, and the row selection pulse SELECT output from the pulse generating circuit 50a to the pixel portion 10 of the (N-1)th row, Figure 8 (d) to (f) respectively represent the reset pulse RS, the transfer pulse TRAN, and the row selection pulse SELECT output from the pulse generating circuit 50a to the pixel portion 10 of the Nth row, Figure 8 (g) represents the sample and hold pulse SHNC output from the pulse generating circuit 50...

Embodiment 3

[0129] Next, a solid-state imaging device according to another embodiment of the present invention will be explained.

[0130] 10 is a circuit diagram showing the structure of a solid-state imaging device according to Embodiment 3 of the present invention. In addition, although a plurality of pixel portions are actually provided in the row direction and the column direction, FIG. 10 only shows one of them. In addition, with image 3 Corresponding parts of the solid-state imaging device 1 shown have the same reference numerals, and the description is omitted.

[0131] The difference from the case of the second embodiment is that the noise signal removal sections 30a, 30b provided in the solid-state imaging device 2 respectively detect the signal at the time of large light intensity and the signal at the time of normal light volume, and add the signal at the time of large light volume to The signal of the normal light intensity is determined by the addition control unit 70 (comparat...

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Abstract

To provide a solid-state imaging device capable of achieving a significantly wider dynamic range while obtaining output characteristics without discontinuity up to a high light intensity region. The solid-state imaging device (1) is characterized by including a light-receiving element (photoelectric conversion element PD) that converts incident light into charge and stores it, a storage element (floating diffusion region FD) that stores charge, and The transfer circuit (MOS transistor Q11, pulse generating circuit 50a) that transfers the accumulated charge to the storage element has a transfer circuit that transfers almost all of the accumulated charge to the storage element and transfers only the above-mentioned accumulated charge exceeding a certain amount to the storage element. Partially transmits both modes of action.

Description

Technical field [0001] The present invention relates to a MOS-type solid-state imaging device used in a digital video camera (camera: video camera or camera), etc., and particularly relates to a technique for expanding a dynamic range. Background technique [0002] In recent years, with the development of image colorization, MOS solid-state imaging devices have remarkably increased in digital still cameras, mobile phones with cameras, etc., and demands for miniaturization and high-resolution solid-state imaging devices are increasing. However, the demand for such solid-state imaging devices has reduced the light-receiving area of ​​the photoelectric conversion element, which is the light-receiving sensor, and as a result, has reduced the photoelectric conversion characteristics (sensitivity, dynamic range), which are the main characteristics of the solid-state imaging device. [0003] For example, the optical size of a solid-state imaging device installed in a digital still camer...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/146H04N5/335H04N5/341H04N5/355H04N5/374H04N5/376
Inventor 春日繁孝山口琢己村田隆彦
Owner PANASONIC CORP
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