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CMOS photoelectric integrated receiver with pre-equalizing circuit

A technology of equalization circuit and optoelectronic integration, applied in electromagnetic receivers, circuits, electrical components, etc., can solve problems such as low sensitivity, achieve good reliability, reduce the number of components, and improve stability

Inactive Publication Date: 2006-03-01
TIANJIN UNIV
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  • Abstract
  • Description
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AI Technical Summary

Problems solved by technology

In order to overcome the shortcoming of low sensitivity of the existing photoelectric integrated receiver fully compatible with the standard CMOS process, the present invention intends to use a high-impedance amplifier with a pre-equalizing circuit to realize a photoelectric integrated receiver that can work at high speed and has high sensitivity

Method used

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Embodiment Construction

[0023] The present invention is realized by the following methods: figure 1 It is a cross-sectional view of the structure of the photodetector compatible with standard CMOS technology, figure 2 It is the principle diagram of the front equalization circuit of the silicon photoelectric integrated receiver of the present invention. Combine below figure 1 with figure 2 To elaborate:

[0024] figure 1 The process flow of the photodetector shown is as follows: First, make a deep N-well 2 on the P-type semiconductor substrate 1, and then make two P-wells 3 and 12 in the deep N-well 2 and on the P-type substrate at the same time. N well 2 and P well 3 are used to make interdigital photodetectors, and P well 12 is used as an N-type MOS tube. Then an N well 13 is fabricated on the P-type substrate, in which a P-type MOS tube is fabricated. Then a polysilicon layer is deposited, and the gates 14 and 15 of the NMOS tube and the PMOS tube are fabricated by photolithography and etching.

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Abstract

A CMOS photoelectric integrated receiver with front equalizer consists of photo-electric converting component ; front equalizing circuit including buffer resistance , resonant inductance , junction capacity of photoelectric detector and input capacity of preamplifier ; and preamplifier . It is featured as connecting series circuit formed by buffer resistance and resonant inductance to place between input end and earthening end of preamplifier , forming a parallel resonant circuit by connecting said series circuit and junction capacity of silicon photoelectric detector as well as input capacity of preamplifier in parallel.

Description

Technical field [0001] The invention belongs to the field of optical communication systems and optical interconnections, and relates to a high-speed photoelectric integrated receiver that is fully compatible with a standard complementary metal oxide semiconductor (CMOS) process. Background technique [0002] The optical receiver is usually composed of a detector and a preamplifier. If the detector and the preamplifier are made on the same chip, it is called an optoelectronic integrated receiver. There have been reports of optoelectronic integrated receivers compatible with standard CMOS process, but there are only two cases: one is that it can work at high speed but the sensitivity is too low, and the other is that the sensitivity is high and can only work at low speed, so it is compatible with CMOS process. Optoelectronic integrated receivers in high-speed (hundreds of megabytes to several gigabytes) of optical communications have not yet entered the practical stage. Existing pr...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/14H04B10/06H04B10/60
Inventor 毛陆虹余长亮
Owner TIANJIN UNIV
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