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ZnS infrared window transparent increasing protective film and its preparing method

A technology of infrared window and protective film, which is applied in the direction of optical components, optics, instruments, etc., can solve the problems of thin film refractive index and thickness error, easy design and difficult preparation, etc., and achieves simple preparation method, ideal anti-reflection effect and good application prospect Effect

Inactive Publication Date: 2005-10-26
JILIN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, affected by factors such as the test instrument and the poor uniformity of the coated film, there are often large errors in the measured refractive index and thickness of the film. It is difficult to obtain an ideal anti-reflection effect in the experiment by referring to this test result, resulting in increased Penetration research work is often easy to design and difficult to prepare

Method used

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  • ZnS infrared window transparent increasing protective film and its preparing method
  • ZnS infrared window transparent increasing protective film and its preparing method
  • ZnS infrared window transparent increasing protective film and its preparing method

Examples

Experimental program
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Effect test

Embodiment 1

[0021] The structure of embodiment 1 double-layer anti-reflection protective film system

[0022] Lambda of the present invention 0 / 4-λ 0 / 4 The structure of the double-layer antireflection protective film system is as follows: figure 1 shown. The entire double-layer anti-reflection protective film system is composed of a ZnS substrate 1, a high-refractive-index film 2 in the first layer, and a low-refractive-index film 3 in the second layer. The optical thicknesses of high refractive index film 2 and low refractive index film 3 are both λ 0 / 4=2~3μm.

[0023] The high refractive index film 2 and the low refractive index film 3 are Ge 1-x C x Material, wherein x=0.2~0.6.

[0024] Due to the refractive index of ZnS (n 1 =2.2) is small, and the Ge that can be obtained in the current experiment 1-x C x The refractive index of the film is relatively large, so a layer of optical thickness λ can be coated on the ZnS substrate first. 0 / 4, the refractive index is n 2 thi...

Embodiment 2

[0025] Embodiment 2 The preparation method of the ZnS infrared window anti-reflection protective film of the present invention

[0026] Experimentally, using radio frequency magnetron sputtering method to CH 4 / Ar as the discharge gas to synthesize Ge on the ZnS substrate 1-x C x Double-layer film, the deposition system is the FJL-450B type magnetron sputtering and ion beam composite sputtering equipment produced by the Shenyang Scientific Instrument Company of the Chinese Academy of Sciences, and the RF power frequency is 13.56MHz. Discharge gas CH 4 , Ar is sent from the bottom of the vacuum chamber, and the two gases are respectively passed through the gas regulating valve and flow meter, and then mixed into the vacuum reaction chamber at a certain ratio, and a vacuum pump is connected under the reaction chamber system to control the pressure of the reaction chamber at 0.5 ~2.0 Pa. After glow discharge, CH 4 , The positive ions generated by Ar ionization bombard the Ge...

Embodiment 3

[0028] Example 3Ge 1-x C x Refractive index n and CH of material film 4 / (CH 4 +Ar) The experimental curve of the flow ratio relationship

[0029] After many experiments, the refractive index n~CH 4 / (CH 4 +Ar) curve such as figure 2 shown. With CH 4 / (CH 4 +Ar) flow ratio increases, Ge 1-x C x The refractive index n of the film becomes smaller accordingly. in CH 4 / (CH 4 +Ar)=5-40%, the refractive index n of the film is in the range of 2.4-4.0. According to the experimental curve, the n of the high refractive index film 2 and the low refractive index film 3 can be selected respectively 2 and n 3 After that, the corresponding CH 4 / (CH 4 +Ar) ratio, which determines the experimental parameters.

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Abstract

This invention is about a kind of ZnS infrared window reflection reducing and protecting coating and its producing method, belonging to the field of coating technology. We choose 9.2micron as the central wavelength lambda 0. On Base 1 of the ZnS material we make lambda 0 / 4 - lambda 0 / 4 double-layer reflection reducing and protecting coating series. The refractive index of the high refractive index coating 2 is 3.2 -4.0 and the optical thickness is 2-3micron. Meanwhile, the refractive index of the low refractive index coating 3 is 2.3 -3.0 and the optical thickness is 2-3micron. The producing method is the radio-frequency magnetron sputter method, choosing Ge as the target source and CH4 / Ar as the electric discharge gas. Then deposit Ge1-xCx reflection reducing and protecting coating on the base of ZnS, and by changing the depositing time we can make each coating's optical thickness is lambda 0 / 4. This invention is easy, economic, efficient and has satisfying effect of reflection reducing.

Description

technical field [0001] The invention belongs to the technical field of thin films, and in particular relates to a composition of an anti-reflection protective film used for infrared window and dome materials and a preparation method of an anti-reflection protective film based on a ZnS material. Background technique [0002] The infrared window is an indispensable part of the infrared system, and its function is to protect the thermal imaging system from working normally during high-speed flight and in various harsh environments. ZnS is the preferred infrared window and fairing material with a long wavelength of 8-11.5 μm, but limited by its inherent properties, its surface needs to be coated with an anti-reflective protective film to improve its mechanical properties and infrared light transmission performance in practical applications. [0003] The prior art closest to the present invention is an article published in "Journal of Infrared and Millimeter Waves" Volume 19, No....

Claims

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Application Information

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IPC IPC(8): G02B1/115
Inventor 郑伟涛胡超权田宏伟
Owner JILIN UNIV
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