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Magnetic random access memory

A random access memory, magnetic field technology, applied in static memory, digital memory information, information storage, etc., can solve the problem of not talking about bias magnetic field, and achieve the effect of reducing bias magnetic field and suppressing manufacturing deviation

Inactive Publication Date: 2005-09-14
NEC CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, these documents do not mention at all that the bias magnetic field of the free layer of the magnetoresistive element is zero.

Method used

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Effect test

no. 1 approach

[0061] Figure 7 The structure of the MRAM according to the first embodiment of the present invention is shown. To help understand the structure, note that Figure 7The aspect ratio values ​​shown for the MRAM structure are different from those of the actual MRAM.

[0062] The MRAM of the first embodiment has a substrate 1 and a lower electrode 2 . A lower electrode 2 is formed on a substrate 1 . Lower electrode 2 includes metal lead layer 3 , seed layer 4 and antiferromagnetic layer 5 . Metal wiring layer 3 is typically formed of Al or Cu. The seed layer 4 is typically formed of a Ta film or a laminated film of Ta and Ru films. The antiferromagnetic layer 5 is formed of an antiferromagnetic material, typically FeMn, IrMn, or PtMn.

[0063] A laminated ferrite fixed layer 6 is formed on the lower electrode 2 . The laminated ferrite fixed layer 6 includes a first pin layer 7, a second pin layer 9, and a non-magnetic spacer layer 8 interposed therebetween. The first pin ...

no. 2 approach

[0102] Figure 11 A second embodiment of the MRAM of the present invention is shown. For ease of understanding, note that Figure 11 The aspect ratio values ​​for the construction of the shown MRAM are different from the actual MRAM.

[0103] In the MRAM of the second embodiment, the orange peel effect and the magnetostatic coupling effect are suppressed by the laminated ferrite pinned layer 6' having a structure different from that of the laminated ferrite pinned layer 6 of the first embodiment.

[0104] The laminated ferrite pinning layer 6' used in the MRAM of the second embodiment includes a first pin layer 7', a plurality of non-magnetic spacer layers 8', and first and second pin layers respectively formed on the non-magnetic spacer layers 8'. Two nail needle layers 9'. The first pin layer 7' and the second pin layer 8' are formed of a ferromagnetic material, and thus have spontaneous magnetization, respectively. The first pinning layer 7' and the second pinning layer...

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Abstract

A technique is provided in which an offset magnetic field of a memory cell of a MRAM is reduced more effectively. The MRAM of the present invention is composed of a free layer ( 11 ) which has a reversible free spontaneous magnetization, a fixed layer ( 6 ) which has fixed spontaneous magnetization, and a spacer layer ( 10 ) formed of non-magnetic interposed between the free layer ( 11 ) and the fixed layer ( 6 ). The fixed layer ( 6 ) is formed such that orange peel effect and magneto-static coupling effect does not substantially influence on the free layer ( 11 ).

Description

technical field [0001] The present invention relates to Magnetic Random Access Memory (MRAM). In particular, the present invention relates to techniques for canceling bias magnetic fields that may be generated in memory cells of MRAMs. Background technique [0002] A magnetic random access memory (Magnetic Random Access Memory: hereinafter referred to as "MRAM") is attracting attention as a nonvolatile memory capable of high-speed writing and having a large number of times of rewriting. [0003] A typical MRAM memory cell such as figure 1 As shown, it includes a pinned layer (pinned layer, pinned layer) 101 with fixed spontaneous magnetization, a free layer 102 with reversible spontaneous magnetization, and a non- The magnetic spacer layer 103 constitutes the magnetoresistive element 104 . The free layer 102 can be reversely formed so that its spontaneous magnetization direction can be parallel or antiparallel to the spontaneous magnetization direction of the pin layer 10...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G11C11/16H01F10/32H01L27/22
CPCG11C11/16B82Y25/00H01L27/222H01F10/3272H10B61/00
Inventor 松寺久雄沼田秀昭
Owner NEC CORP
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