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Eigen decomposition based OPC model

A technique of eigenfunction and mask design, which is applied in the fields of original, character and pattern recognition for opto-mechanical processing, photoengraving of textured surfaces, etc.

Inactive Publication Date: 2005-08-31
ASML MASKTOOLS BV
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Problems solved by technology

Rosenbluth also recognizes that this computation is limited due to the symmetry of the dependent mask
However, the linearization of mask transmission used by Rosenbluth requires the use of several approximations in the calculations, rather than the actual imaging equation itself, which introduces errors when using the mask to form the desired image
The linearization of the mask transfer also uses a lot of variables, which requires a lot of computing time to perform the calculation

Method used

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Embodiment Construction

[0057] A method and system for model OPC based on eigenfunction decomposition (referred to as eigendecomposition model or EDM) is disclosed. In the present invention, the partially coherent imaging system is preferably decomposed into a series of coherent imaging systems. This series of coherent imaging systems provides an efficient and precise method to characterize the spatial image intensity distribution around a point of interest (x, y), which may be used to design an improved mask to enhance the Resolution of desired image features. For accurate model OPC on mask patterns, we must ensure that lighting effects are adequately considered. For tractable model OPC applications, the present invention uses eigenfunction decomposition to best approximate partially coherent imaging systems. The best approximation is used to generate a model that can be used to generate a SPIF function for each mask that a computer simulation program can use to simulate the pattern produced by th...

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Abstract

Model OPC is developed based on eigen function decomposition of an aerial image expected to be produced by a mask pattern on a surface of a resist. With the eigen function decomposition method the aerial image intensity distribution around a point (x,y) is accurately described in the model. A scalar approach may be used in the eigen function decomposition model which treats the light wave through the mask as a scalar quantity. A eigen function decomposition alternatively may use a vector approach which utilizes a vector to describe the light wave and the pupil function. A predicted SPIFF (system pseudo intensity function) may be generated from the aerial modelling may be used to verify the mask modelling process by comparing the predicted SPIFF to an experimentally determined SPIFF. The model OPC, once calibrated, may be used to evaluate performance of a mask and refine features of the mask.

Description

[0001] This application claims priority to provisional application 60 / 517,083, filed November 5, 2003, entitled "MODEL OPC IMPLEMENTATION WITH GENERALIZEDILLUMINATION," and also claims priority to provisional application 60 / 605,716, filed at Filed August 31, 2004, entitled "VECTOR EIGEN DECOMPOSITION BASEDOPC MODEL," the entire contents of each of which are incorporated herein by reference. technical field [0002] The field of the invention broadly relates to a method, apparatus and program product for preventing optical proximity correction of a target mask pattern. The present invention more particularly relates to methods, apparatus and program products for generating a model of an imaging process that can be used to simulate the aerial image of the imaging process for any given input mask pattern. Background technique [0003] Lithographic apparatus can be used, for example, in the manufacture of integrated circuits (ICs). In this case, the lithographic mask may contai...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03F1/00G03F1/36G03F7/20G06F17/50G06K9/00H01L21/027
CPCG03F1/144G03F1/36G03F7/705G03F7/70441
Inventor X·施R·索查T·莱迪J·F·陈D·范登布罗克
Owner ASML MASKTOOLS BV
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