Method for eliminating static electricity of metal conducting layer to complete etching

Abstract

This invention relates to a method to remove metal conductive layer static complete etching, which comprises the following steps: a, depositing a metal conductive layer on the on nitrogen layer; b, depositing a fluorin and silicon glass on the nitrogen layer with several round holes and grooves opened; c, using the electric plasm with high gas pressure and low density generated free electrons impacting the metal conductive layer; d, etching the nitrogen layer on the round holes and groove bottom by several etching ions.

Description

technical field [0001] In the manufacturing process of the wafer, the positive charge and static electricity will accumulate on the metal conductive layer to form a barrier of potential energy. When the hole or the groove is smaller, the nitride layer on the metal wire layer will be difficult to etch completely. The present invention The method of eliminating the static electricity of the metal conductive layer to complete the etching can eliminate the positive charge static electricity accumulated on the metal conductive layer, so that the nitride layer at the bottom of the round hole or the trench can be completely etched. Background technique [0002] It is known that in the plasma etching process of semiconductors, some etching incompleteness occurs; the incomplete etching is caused by electrostatic accumulation of positive charges on the metal conductive layer. For example (such as figure 1 As shown), it is known that a conductive metal layer 1a is usually located abov...

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Problems solved by technology

As an example (such as figure 1 As shown), it is known that a conductive metal layer 1a is usually located above an oxide layer 5a; a nitride layer 2a is deposited on the conductive metal layer 1a by plasma vapor deposition, and the conductive metal layer 1a is deposited in In the manufacturing process of the method, or through dry air friction, there will be a situation where a positive charge static electricity 11a accumulates in the metal conductive layer 1a; It is difficult for several etching ions 4a of electricity to enter a round hole or the bottom of the trench 31a next to a fluorosilicate glass 3a (especially when the round hole or the trench is smaller), so it is difficult for the etching ion 4a to contact the nitride layer. 3a The etching reaction is carried out, thus causing incomplete etching, which will cause a decrease in the yield rate in the wafer manufacturing process

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