Semiconductor device

Abstract

An object of the present invention is to establish, for an LSI having a stacked interconnection structure of Cu interconnect / Low-k material, a narrow pitch wire bonding technique enabling a reduction in damage to a bonding pad and application similar to the conventional LSI of an aluminum interconnection. In a semiconductor device having a multilayer interconnection made of a Cu interconnect / Low-k dielectric material, the above-described object can be attained by a bonding pad structure in which all the wiring layers up to the uppermost cap interconnect are formed of a Cu wiring layer and a bonding pad portion formed of a Cu layer is equipped with a refractory intermediate metal layer such as Ti (titanium) filmor (tungsten) film on the Cu layer and an aluminum alloy layer on the intermediate metal layer.

Description

technical field [0001] The present invention relates to semiconductor devices. Background technique [0002] Hitherto, aluminum alloy wiring has been used for wiring between semiconductor elements in a semiconductor device, and connection members such as bonding wires have been used for electrical connection to the outside. In order to suppress the deterioration of the soundness of the connection of these connection members, for example, in the invention disclosed in (Japanese) Unexamined Patent Publication No. 5-6915 (Patent Document 1), a bonding wire connection on a semiconductor substrate covered with an insulating film is In the structure of the electrode pad part, the following structure is proposed: the insulating film is composed of SiO film or phosphate silicon glass (PSG), and the electrode pad is composed of three layers: the lower layer is an Al film, the middle layer is a Ti compound film, and the upper layer is an Al film. The structural composition prevents d...

AI Technical Summary

Problems solved by technology

Therefore, it is necessary to implement narrow-pitch wire bonding to the hard bonding pads conventionally formed on a very soft substrate insulating material, and no countermeasures are disclosed in the above-mentioned known examples.

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