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Plasma processing system and method therefor

A technology of plasma and processing systems, applied in the fields of plasma, metal material coating process, semiconductor/solid state device manufacturing, etc.

Inactive Publication Date: 2003-05-28
LAM RES CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

One of the most important issues for manufacturers is the cost of process equipment ownership, which includes, for example, the cost of acquiring and maintaining the system, the frequency of process chamber cleaning required to maintain acceptable process performance, the life of system components, etc.

Method used

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  • Plasma processing system and method therefor
  • Plasma processing system and method therefor
  • Plasma processing system and method therefor

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Embodiment Construction

[0037] DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENT

[0038]The invention will now be described in detail with reference to some preferred embodiments of the invention shown in the accompanying drawings. In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present invention. It will be apparent, however, to one skilled in the art that the present invention may be practiced without some or all of these specific details. In other instances, well known process steps and / or structures have not been described in detail in order not to unnecessarily obscure the present invention.

[0039] In one embodiment, the present invention relates to an improved plasma processing system capable of a high degree of process uniformity control. The exemplary improved plasma processing system includes a single-chamber, substantially azimuthally symmetric (i.e., each section parallel to the plane of the wafer has a nearly ci...

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PUM

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Abstract

A plasma processing system for processing a substrate which includes a single chamber, substantially azimuthally symmetric plasma processing chamber within which a plasma is both ignited and sustained for the processing. The plasma processing chamber has no separate plasma generation chamber. The plasma processing chamber has an upper end and a lower end. The plasma processing system includes a coupling window disposed at an upper end of the plasma processing chamber and an RF antenna arrangement disposed above a plane defined by the substrate when the substrate is disposed within the plasma processing chamber for the processing. The plasma processing system also includes an electromagnet arrangement disposed above the plane defined by the substrate. The electromagnet arrangement is configured so as to result in a radial variation in the controllable magnetic field within the plasma processing chamber in the region proximate the coupling window and antenna when at least one direct current is supplied to the electromagnet arrangement. The radial variation is effective to affect processing uniformity across the substrate. The plasma processing system additionally includes a dc power supply coupled to the electromagnet arrangement. The dc power supply has a controller to vary a magnitude of at least one direct current, thereby changing the radial variation in the controllable magnetic field within the plasma processing chamber in the region proximate the antenna to improve the processing uniformity across the substrate.

Description

Background of the invention [0001] References to related cases [0002] This application is related to the following currently filed U.S. patent applications: [0003] Patent application No.09 / 439661, titled "IMPROVED PLASMA PROCESSING SYSTEMS AND METHODS THEREFOR", (attorney case number: No.LAM1P122 / P0527); [0004] Patent application No.09 / 470236, titled "PLASMA PROCESSING SYSTEM WITHDYNAMIC GAS DISTRIBUTION CONTROL", (attorney case number: No.LAM1P123 / P0557); [0005] Patent application No.09 / 439671, titled "TEMPERATURE CONTROL SYSTEM FORPLASMA PROCESSING APPARATUS", (attorney case number: No.LAM1P124 / P0558); [0006] Patent application No.09 / 440418, titled "METHOD AND APPARATUS FORPRODUCING UNIFORM RATES", (attorney case number: No.LAM1P125 / P0560); [0007] Patent application No.09 / 440794, titled "MATERIALS AND GAS THEMISTRIES FOR PLASMA PROCESSING SYSTEMS", (attorney case number: No.LAM1P128 / P0561); [0008] Patent application No.09 / 439759, titled "METHOD AND APPARATU...

Claims

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Application Information

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IPC IPC(8): H05H1/46C23C16/507H01J37/32H01L21/205H01L21/3065
CPCH01J37/3266H01J37/32623H01L21/3065
Inventor A·D·拜利三世A·M·舍普D·J·赫姆克尔M·H·维尔科克森A·库蒂
Owner LAM RES CORP
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