Semiconductor laser component element, optical fiber amplifier and photo communication system using said component element
A technology of semiconductor and laser components, applied in the direction of semiconductor lasers, lasers, wavelength division multiplexing systems, etc., can solve problems such as difficult optical amplification, large multiplex loss, and optical limitation
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[0154] Formed on a substrate using GaInAsP-based semiconductor materials image 3 In the layer structure shown, cleavage makes the resonator length (L) 1300 μm, 1500 μm, forms a high reflection film with a reflectivity of 95% as the rear end surface 3B, and forms a reflectivity of 1.2% on the other cleaved surface Two types of laser elements 3 were fabricated using a low-reflection film as the front end face 3A. These laser elements respectively generate laser light with an oscillation spectrum having a center wavelength of 1480 nm.
[0155] The conditions of these laser elements are summarized in Table 2.
[0156] Laser element a
Laser component b
Resonator length (L: μm)
1300
1500
(%)
rear face
95
95
Front face (R 1 )
0.1
0.1
Center wavelength of oscillation spectrum (nm)
1480
1480
[0157] Next, the front end faces 3A of the above-m...
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