Silicon nitride read only memory structure possessing protection diode and its operation method

Abstract

A structure for silicon nitride read-only storage with protective diode is composed of substrate, storing unit of silicon nitride read-only storage, N+ doping region, N+ guard ring and polysilicon guard ring as the storing unit of silicon nitride read only storage to be located on the substrate, N+ doping region to be located in the substrate and to be connected with a character line of the storing unit for silicon nitride read only storage, N+ guard ring to be located in the substrate around the N+ doping region and the polysilicon guard ring to be located on the substrate between N+ doping region and N+ guard ring.

Description

technical field [0001] The present invention relates to a structure of a non-volatile memory (Non-Volatile Memory) element, and in particular to a structure of a silicon nitride read-only memory with a protection diode and an operation method thereof. Background technique [0002] The Electrically Erasable Programmable Read Only Memory (EEPROM) in the non-volatile memory has the ability to store, read, and erase data multiple times, and the stored data is interrupted. It has the advantage that it will not disappear after power on, so it has become a memory component widely used in personal computers and electronic equipment. [0003] A typical EEPROM uses doped polysilicon to make a floating gate (Floating Gate) and a control gate (Control Gate). When the memory is programmed, the appropriate programming voltage is applied to the source region, the drain region and the control gate respectively, and electrons will flow from the source region to the drain region through the ...

AI Technical Summary

Problems solved by technology

However, the silicon nitride read-only memory device with this structure, when performing programming or reading operations, the bias voltage given to the word line will be higher than that of the diode (N + The breakdown voltage of the doped region), so the bias applied to the word line will be caused by the diode (N + The electrical collapse of the doped region) is reduced, which in turn affects the speed of element operation (writing / erasing)

Images