Patten drawing device

Abstract

The pattern plotting apparatus 1 is equipped with a stage 32 holding a substrate 9, a stage moving mechanism 2 to move the stage 32, a light emitting part 5 to emit light to the substrate 9, a mask part 52 having a first mask 53 and a second mask 54 formed with a plurality of apertures, and an optical unit 58 to enlarge or reduce the irradiation region on the substrate 9 to be irradiated with the light passing through the mask part 52. In the pattern plotting apparatus 1, the overlapped part of the apertures in the first mask 53 and the second mask 54, and the magnification of the optical unit 58 are varied. Thereby, the width and the pitch of the pattern to be plotted can be easily varied, and a stripe pattern can be plotted at high speed with high resolution on the photosensitive material on the substrate 9.

Description

technical field [0001] The present invention relates to a technique for drawing a pattern by irradiating light to a photosensitive material on a substrate. Background technique [0002] In the past, as a method of drawing a pattern by irradiating light on a photosensitive material formed on a semiconductor substrate, a printed circuit board, or a plasma display device, a liquid crystal display device, a glass substrate for a photomask, etc. (hereinafter referred to as "substrate") As a method, methods for transferring a mask pattern onto a photosensitive material such as a proximity exposure method and a stepper exposure method are known. [0003] In the proximity exposure method, a mask of the same size as the substrate having openings corresponding to the drawn pattern is brought close to the substrate and irradiated with light to transfer the entire pattern onto the photosensitive material on the substrate. In the step exposure method, the projection of the mask pattern ...

AI Technical Summary

Problems solved by technology

In the proximity exposure method in which the entire mask pattern is transferred to a photosensitive material, light is irradiated by bringing the mask and the substrate close together, so the price of the mask is relatively high in order to cope with the high precision of the pattern and the increase in the size of the substrate. high

In addition, the proximity exposure method and the step exposure method have the disadvantage that they cannot flexibly respond to changes in the pitch and width of the pattern to be drawn.

[0006] In the direct drawing method, the raster method is generally used, and the pattern is expressed as a collection of tiny dots (pixels), and the pattern is drawn in units of dots. However, in order to correspond to the high precision of the pattern , it is necessary to increase the resolution of the drawing device (that is, to reduce the area of ​​1 dot), and the time required to draw the pattern on the large substrate as a whole increases

[0007] As a way to shorten the drawing time, it is considered to increase the number of beams to be scanned and at the same time to increase the number of dots to be drawn. However, with the increase in the number of beams, the size of the light irradiation mechanism increases and the cost of the manufacturing device increases.

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