Manufacturing method of semiconductor laser device

Abstract

The present invention provides a method of manufacturing a semiconductor laser device. First, a light emitting portion is formed on a single substrate and mounted on a sub-mount. Then, the substrate mounted on the sub-stage is cut from an intermediate position between the light emitting parts. In the laser device manufactured in this way, since the two laser elements are formed on a single chip, the relative positional accuracy between them can be improved. Since the substrate is cut between the laser elements, heat conduction and electrical crosstalk through the substrate can be significantly suppressed, so the relative positional accuracy of multiple laser elements can be ensured to a high degree, and the influence of crosstalk can be suppressed.

Description

technical field [0001] The present invention relates to a method of manufacturing a semiconductor laser device including a plurality of semiconductor laser elements on a sub-mount. Background technique [0002] In the past, for example, as shown in Document 1 (Japanese Laid-Open Patent Gazette; Japanese Unexamined Patent Publication No. 3-145779, publication date; June 20, 1991), a laser device (multi-beam laser device; MB laser device). [0003] Such MB laser devices are used, for example, in players capable of reproducing both CDs and DVDs, and laser beam printers (LBP; digital copiers, etc.) that expose photoreceptors with two laser beams. [0004] In addition, when such an MB laser device is used in the above-mentioned player, the two types of laser beams have different wavelengths. [0005] Also, when used on a printer, 2 laser beams will be emitted simultaneously. Therefore, it is necessary to have a configuration capable of driving the two laser elements independen...

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