Vertical cavity surface emitting laser and preparation method thereof

Abstract

The vertical cavity surface emitting laser comprises a substrate, a lower grating layer, an active layer, a contact layer and an upper grating layer which are sequentially arranged from bottom to top, the upper grating layer is arranged in the middle of the contact layer in a protruding mode, and a first step part is formed between the side wall of the upper grating layer and the contact layer; the contact layer and the active layer are arranged in the middle of the lower grating layer in a protruding mode, a second step portion is formed between the side wall of the contact layer and the side wall of the active layer and the lower grating layer, a p-type electrode is further arranged on the contact layer, a heat dissipation electrode is further arranged on the p-type electrode, and the heat dissipation electrode extends to the second step portion from the first step portion. According to the invention, the p-type electrode is arranged on the contact layer, so that the p-type electrode is close to the active layer, and free carrier absorption and spontaneous heating phenomena can be effectively reduced; in addition, the p-type electrode is also provided with the heat dissipation electrode, so that the contact surface between the heat dissipation electrode and the outside is further increased, and the heat dissipation performance of the vertical cavity surface emitting laser is improved.

Description

technical field [0001] The invention belongs to the field of lasers, and in particular relates to a vertical cavity surface emitting laser and a preparation method thereof. Background technique [0002] At present, high-power vertical cavity surface-emitting lasers (VCSELs) for mobile phone facial recognition, laser printing, and lidar are a research focus of surface-emitting optoelectronic devices, which have high electro-optical conversion efficiency, small divergence angle, and wavelength temperature drift. The advantages of small size and ease of wafer-level screening, inspection, etc., compared to edge-emitting lasers that emit from the side, VCSEL lasers have higher chip yields. VCSEL lasers generally use GaAs material as the substrate, and the active region material with lattice matching as the light-emitting region. The lasing wavelength is about 600-1300 nm, and the post-processing process is relatively simple. Since conventional p-type metal electrodes need to inj...

AI Technical Summary

Problems solved by technology

Since the traditional p-type metal electrode needs to inject current from the upper surface of the p-doped Bragg reflection region (DBR) to the active region of the quantum well, this process will cause serious freedom in thicker p-type materials. Carrier Absorption and Self-Heating Phenomena

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