Substrate for testing flat panel detector and testing method thereof

A technology of flat-panel detectors and substrates, applied in semiconductor/solid-state device testing/measurement, semiconductor devices, electric solid-state devices, etc., can solve the problem of TFT characteristic difference between Teg area and AA area, and avoid inaccurate test data, The effect of good characteristics and fast response speed of the test

Pending Publication Date: 2022-06-28
BEIJING BOE SENSOR TECH CO LTD +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The embodiments of the present invention provide a flat panel detector test substrate and its testing method, which are used to solve the existing problem that the TFT characteristics of the Teg region and the AA region are different when testing the TFT characteristics of the flat panel detector.

Method used

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  • Substrate for testing flat panel detector and testing method thereof
  • Substrate for testing flat panel detector and testing method thereof
  • Substrate for testing flat panel detector and testing method thereof

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Embodiment Construction

[0027] To make the objectives, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings of the embodiments of the present invention. Obviously, the described embodiments are some, but not all, embodiments of the present invention. Also, the embodiments of the present invention and the features of the embodiments may be combined with each other without conflict. Based on the described embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without creative work fall within the protection scope of the present invention.

[0028] Unless otherwise defined, technical or scientific terms used in the present invention shall have the ordinary meaning as understood by one of ordinary skill in the art to which the present invention belongs. When use...

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PUM

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Abstract

The embodiment of the invention discloses a substrate for testing a flat panel detector and a testing method thereof, the embodiment of the invention is to test the characteristics of a TFT (Thin Film Transistor) of a whole testing area, and compared with the prior art that the characteristics of the TFT are tested by adopting a TFT test key (Teg) in a peripheral area at the periphery of a detection area, real and effective I-V data of the TFT in an AA area can be obtained, and the testing efficiency is improved. Therefore, the IV characteristic of the TFT in the AA area can be truly and accurately reflected, and the problem of inaccurate test data in the Teg area in the prior art is effectively avoided. In addition, only the TFT and the voltage line for testing are manufactured in the detection area in the embodiment of the invention, so that the testing response speed is higher.

Description

technical field [0001] The invention relates to the technical field of photoelectric detection, in particular to a substrate for testing a flat panel detector and a testing method thereof. Background technique [0002] X-ray inspection technology is widely used in industrial non-destructive testing, container scanning, circuit board inspection, medical, security, industry and other fields, and has broad application prospects. Traditional X-Ray imaging technology belongs to analog signal imaging, with low resolution and poor image quality. X-ray digital imaging technology uses an X-ray flat panel detector to directly convert X-ray images into digital images. Because the converted digital images are clear, high-resolution, and easy to save and transmit, they have been widely developed and applied. [0003] X-ray flat panel detectors generally include thin film transistors (Thin Film Transistor, TFT) and photodiodes. Under X-ray irradiation, the scintillator layer or phosphor...

Claims

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Application Information

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IPC IPC(8): H01L27/12H01L21/66H01L23/544H01L27/146
CPCH01L27/124H01L22/32H01L22/34H01L22/14H01L27/14658H01L27/14612H01L27/14636
Inventor 姜振武张冠侯学成杨祎凡赵镇乾
Owner BEIJING BOE SENSOR TECH CO LTD
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