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Mask for partial plating, method for manufacturing insulated circuit board using said mask, and partial plating method

A technology of insulating substrates and circuit substrates, which is applied in the fields of printed circuit manufacturing, printed circuit components, circuits, etc., can solve problems not specifically disclosed, and achieve the effects of improving productivity, reducing costs, and simple structure

Pending Publication Date: 2022-05-06
DOWA METALTECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, it does not specifically disclose how to ensure a power supply path from the cathode power supply to the metal part to be plated when performing electroplating

Method used

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  • Mask for partial plating, method for manufacturing insulated circuit board using said mask, and partial plating method
  • Mask for partial plating, method for manufacturing insulated circuit board using said mask, and partial plating method
  • Mask for partial plating, method for manufacturing insulated circuit board using said mask, and partial plating method

Examples

Experimental program
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Effect test

Embodiment 1

[0094] ready to have with figure 1 The example shown is an insulating circuit board with the same laminated structure (however, the plating layer has not been formed yet). metal parts ( figure 1 The configuration of symbol 102) is also with figure 1 similar. The islands of the metal component are respectively electrically isolated on the insulating substrate. insulating substrate ( figure 1 The symbol 101) is an aluminum nitride plate with a size of 67mm×71mm×0.6mm. Metal parts to be joined on ( figure 1 The symbol 102) is a plate with a thickness of 1.3mm made of pure aluminum with a purity of 99.9%. The heat dissipation base bonded to the back of the insulating substrate ( figure 1 The symbol 104) is also made of pure aluminum with a purity of 99.9%, and has a peripheral wall portion ( figure 1 symbol 105). The thickness of the heat dissipation base was 3 mm in the back portion of the insulating substrate. In addition, the aluminum nitride plate, the metal m...

Embodiment 2

[0101] Ni plating was performed on a predetermined portion of the insulating circuit board under the same conditions as in Example 1 except that a conductive silicone rubber sheet was used as the conductive sheet member. The volume resistivity of this conductive silicone rubber sheet was 10 Ω·cm. When the insulating circuit board after plating was observed, bleeding was not seen at all, and plating with high dimensional accuracy was realized.

[0102] In addition, when a conductive silicone rubber sheet is used as the conductive sheet member, the liquid leakage prevention effect is high, so the conductive sheet member is less likely to react with the plating solution. Since the conductive silicone rubber sheet is inexpensive, it has the advantage of being able to prolong its life without using an expensive titanium plate.

Embodiment 3

[0104] As a mask for partial plating, instead of the type in which a conductive sheet part is embedded in a concave part of an insulating sheet part, such as figure 2 The shown type is a type in which a conductive sheet member is pasted on the surface of a flat insulating sheet member without recesses. In addition, the material of the conductive sheet member was SUS304, and the thickness thereof was 0.01 mm. Except for this, in the same manner as in Example 1, Ni plating was performed on a predetermined portion of the insulating circuit board.

[0105] The thickness of the insulating sheet member of the partial plating mask was 4 mm. The volume resistivity of the SUS304 plate used as the conductive sheet member was 72 µΩ·cm. The arrangement of the conductive sheet member and the arrangement of the openings of the plating mask partially viewed in the thickness direction are the same as in Example 1. Therefore, the distance d from the end of the conductive sheet member to the...

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Abstract

The invention discloses a mask for partial plating, a method for manufacturing an insulated circuit board using the mask, and a partial plating method. Provided is a mask for partial plating, which is capable of selectively performing partial plating on a predetermined portion of the surface of an electrically isolated metal member provided on an insulating substrate, and which has a more simple structure than in the prior art. Also provided are a method for manufacturing an insulated circuit board using the mask, and a partial plating method. The problem is solved by a mask for partial plating having a structure in which a partial region of a surface on one side in the thickness direction of an insulating sheet member in which an opening having a shape corresponding to a portion to be plated is formed is covered by one or a plurality of conductive sheet members attached to the region. The conductive sheet member is adhered to the surface of the insulating sheet member, for example, via an adhesive or an adhesive member. In addition, the conductive sheet member may be embedded in a recess formed in the surface of the insulating sheet member.

Description

technical field [0001] The present invention relates to a "partial plating" for bringing a predetermined portion into contact with a plating solution, which is used when a predetermined portion of the surface of an electrically isolated metal member formed on an insulating substrate is selectively subjected to "partial plating" by an electroplating method. mask for partial plating". Moreover, this invention relates to the manufacturing method of the insulating circuit board using this mask for partial plating, and a partial plating method. Background technique [0002] In semiconductor devices such as power modules, generally, an insulating circuit substrate on which a semiconductor element is mounted on a surface of a circuit metal member formed on an insulating substrate such as ceramics is used as a component. Metal parts for circuits are often made of aluminum-based materials or copper-based materials. A semiconductor element is usually fixed to a metal component for a...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C25D5/02C25D7/00H01L21/48
CPCC25D5/022C25D7/00H01L21/4846C25D7/123H05K1/0306H05K3/243H05K3/241H05K1/0209H05K2203/0548H05K3/188H05K2203/0723
Inventor 肥后正昭井手口悟
Owner DOWA METALTECH CO LTD
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