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Thin film solar cell and preparation method thereof

A technology of thin-film solar cells and ferroelectric films, applied in circuits, photovoltaic power generation, electrical components, etc., can solve the problem of difficult to achieve effective separation of photo-generated carriers, efficient transfer of charges, inability to provide CIGS photo-generated carriers with efficient transfer, and short-circuit current Low density and other issues, achieve high visible light transmittance, improve separation and transmission capabilities, and good electrical conductivity

Pending Publication Date: 2022-04-19
INST OF ELECTRICAL ENG CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] However, CIGS is difficult to achieve effective separation of photogenerated carriers and efficient transport of charges due to band gap limitation and low built-in electric field (Shockley, W. and Queisser, H.J. (1961) Detailed Balance Limit of Efficiency of PN Junction Solar Cells.Journal of Applied Physics, 32, 510-519. and M.A. Green, and S.P. Bremner, “Energy conversion approaches and materials for high-efficiency photovoltaics,” Nature Mater, vol.16, no.1, pp.23–34, 2017.)
Ferroelectric photovoltaic devices can generate photovoltage above the band gap, but traditional ferroelectric materials have small optical absorption coefficient and large band gap, resulting in low short-circuit current density (Yang SY, Seidel J, Byrnes SJ, Shafer P, Yang CH, Rossell MD, etal.Above-bandgap voltages from ferroelectric photovoltaic devices.NatNanotechnol.2010; 5(2):143-7.), still cannot provide effective separation of CIGS photogenerated carriers and efficient transport of charges, and the photoelectric conversion efficiency is low

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  • Thin film solar cell and preparation method thereof
  • Thin film solar cell and preparation method thereof
  • Thin film solar cell and preparation method thereof

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preparation example Construction

[0040] The present invention also provides a method for preparing a thin-film solar cell described in the above technical solution, comprising the following steps:

[0041] A first carrier transport layer, a p-type optical absorption layer, an n-type window layer, a magnetron sputtering ferroelectric film layer, a second carrier transport layer and a metal gate electrode layer are sequentially prepared on the substrate.

[0042] Before preparing the first carrier transport layer on the substrate, the present invention preferably cleans the substrate. In the present invention, there is no special limitation on the cleaning of the substrate, as long as the surface of the substrate is clean and free of impurities.

[0043] In the present invention, the method for preparing the first carrier transport layer is preferably DC magnetron sputtering.

[0044] In the present invention, the method for preparing the p-type optical absorption layer is preferably a three-step co-evaporatio...

Embodiment 1

[0052] A first carrier transport layer with a thickness of 800nm ​​and made of Mo was grown on a clean glass substrate by DC magnetron sputtering; a thickness of 1.7 μm was grown on the surface of the first carrier transport layer by a three-step co-evaporation method , the material is CuIn 0.6 Ga 0.4 Se 2 p-type optical absorption layer; grow a 120nm buffer layer made of n-type CdS by chemical water bath deposition on the p-type optical absorber layer; grow a 370nm thick buffer layer made of ZnMgO by radio frequency magnetron sputtering on the buffer layer N-type window layer; grown on the n-type window layer by radio frequency magnetron sputtering with a thickness of 50nm and made of BaTiO 3 The n-type ferroelectric film layer; on the ferroelectric film layer, a second carrier transport layer with a thickness of 690nm and made of aluminum-doped zinc oxide is grown by radio frequency sputtering; on the second carrier transport layer, the radio frequency magnetic A metal gr...

Embodiment 2

[0056] A first carrier transport layer with a thickness of 769.2 nm and made of Mo was grown on a clean glass substrate by DC magnetron sputtering; a thickness of 2.27 nm was grown on the surface of the first carrier transport layer by a three-step co-evaporation method. μm, material is CuIn 0.5 Ga 0.5 Se 2 p-type optical absorption layer; grow a 120nm buffer layer made of n-type CdS by chemical water bath deposition on the p-type optical absorber layer; grow a 370nm thick buffer layer made of ZnMgO by radio frequency magnetron sputtering on the buffer layer n-type window layer; grown on the n-type window layer by radio frequency magnetron sputtering with a thickness of 48nm and made of BaTiO 3 The n-type ferroelectric film layer; on the ferroelectric film layer, a second carrier transport layer with a thickness of 700nm and made of aluminum-doped zinc oxide is grown by radio frequency sputtering; on the second carrier transport layer, the radio frequency magnetic A metal g...

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Abstract

The invention belongs to the field of photovoltaic technology, and particularly relates to a thin film solar cell and a preparation method thereof. The thin film solar cell provided by the invention comprises a substrate, a first carrier transport layer, a p-type optical absorption layer, an n-type window layer, a ferroelectric film layer, a second carrier transport layer and a metal gate electrode layer which are stacked in sequence, and the ferroelectric film layer is made of BaTiO3, KNbO3, NaNbO3 or BiFeO3, and the ferroelectric film layer is made of a ceramic material. A p-n junction built-in electric field of a traditional photovoltaic device and a depolarization field of a ferroelectric material are utilized at the same time, the separation and transmission capacity of photon-generated carriers is improved through the multi-physical field coupling enhancement effect of the p-n junction built-in electric field and the ferroelectric depolarization field, recombination is reduced, the open-circuit voltage of the cell is increased, and the photoelectric conversion efficiency of the thin film solar cell is improved.

Description

technical field [0001] The invention belongs to the technical field of photovoltaics, in particular to a thin-film solar cell and a preparation method thereof. Background technique [0002] Solar cells can directly convert solar energy into electrical energy by using the photovoltaic effect. It is an effective utilization technology of solar energy and can alleviate the increasing demand for electrical energy in people's daily production and life. The working principle of solar cells is: the light-absorbing layer generates electron-hole pairs under the light, and is separated under the action of the built-in electric field of the p-n junction composed of two semiconductor materials to generate carriers, which move to the The electrodes are connected to an external load to form a loop. Among solar cells, thin-film solar cells (CIGS) materials have high absorption coefficient, strong radiation resistance, good low-light performance, no light-induced attenuation, stability, an...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/072H01L31/0392H01L31/0445H01L31/18
CPCH01L31/0445H01L31/18H01L31/0392H01L31/072Y02E10/50Y02P70/50
Inventor 李辉李丛梦古宏伟
Owner INST OF ELECTRICAL ENG CHINESE ACAD OF SCI
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