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Method and device for improving storage performance of solid-state hardware

A storage performance and hardware technology, applied in static memory, information storage, read-only memory, etc., can solve problems such as bit errors, and achieve the effects of reducing overhead, reducing host response delay, and reducing the number of re-reads

Pending Publication Date: 2022-04-08
MEMORIGHT (WUHAN) CO LTD
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  • Description
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Problems solved by technology

[0004] However, because Nand flash itself has the reliability problem of data retention—the data signal written to the flash will change with the passage of time, which will cause SSD to generate data when it is directly read after a period of time. bit error

Method used

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  • Method and device for improving storage performance of solid-state hardware
  • Method and device for improving storage performance of solid-state hardware
  • Method and device for improving storage performance of solid-state hardware

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Embodiment Construction

[0037] Glossary:

[0038] SSD (Solid State Drive, solid state drive): A hard disk made of a solid-state electronic memory chip array, including a data storage device composed of several NAND Flash arrays.

[0039] NAND: A non-volatile storage medium, which can still save data after power failure, it is also called NAND flash memory chip (NAND Flash)

[0040] Die: Flash memory die, in integrated circuits, die (chip) is a small piece of semiconductor material on which a given functional circuit is fabricated, consisting of memory blocks and logic circuits; in this case, die is NAND Flash The smallest unit for executing commands.

[0041] Rblock: Logical storage unit, which is the basic unit of SSD operation and consists of logical blocks with the same serial number in concurrently operating dies.

[0042] FTL: (Flash Translation Layer, Flash Translation Layer), a software middle layer, also used as a NAND Flash management algorithm, used to simulate the flash memory as a virtu...

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Abstract

The invention discloses a method and device for improving solid state hardware storage performance, and relates to the field of solid state disk storage, and the method comprises the following steps: recording the write-in time of writing to-be-read data in each SSD (Solid State Drive) block area; after a reading command of any SSD block area is received, the data to be read are read with the corresponding offset voltage according to the corresponding relation between the storage duration and the offset voltage; the corresponding relation between the storage duration and the offset voltage is obtained by recording the offset voltage used for successfully reading the test data after the test data is stored in different SSD block areas for different time, the number of rereading times caused by long-time storage degradation is reduced, the data reading performance of the SSD is improved, and the data reading efficiency is improved. The response delay of the host is reduced, and the expenditure of SSD error processing is reduced.

Description

technical field [0001] The invention relates to the field of solid-state hard disk storage, in particular to a method and device for improving the storage performance of solid-state hardware. Background technique [0002] SSD (Solid State Drive) is a storage device composed of several NAND flash memory arrays. Taking Micron B47R Flash as an example, a 512GB SSD consists of 8 Nand Flash Dies, and each block with the same serial number constitutes a The logical storage unit of SSD is called row block, or rblock for short. [0003] Usually, when the host needs to read data from the SSD, the SSD controller uses its internal FTL algorithm to determine the die and rblock where the data is located, and then uses the underlying operation command read from NAND flash to transfer the data from the corresponding flash particles Read out, and then return the data to the host through the interface of the SSD and the host. [0004] However, because Nand flash itself has the reliability ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G11C16/26G11C16/10
Inventor 李悦弗兰克·陈李晓龙
Owner MEMORIGHT (WUHAN) CO LTD
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