Method and device for improving critical dimension uniformity of wafer

Abstract

The invention provides a method and a device for improving the critical dimension uniformity of a wafer. The method comprises the following steps: acquiring first temperature distribution on the surface of a wafer in a drying process after coating; predicting second temperature distribution in the post-exposure drying process according to the first temperature distribution, wherein drying equipment adopted in the post-coating drying process and drying equipment adopted in the post-exposure drying process are manufactured by adopting the same process; and compensating exposure energy in an exposure process according to the second temperature distribution, and exposing the wafer by adopting the compensated exposure energy so as to improve the critical dimension uniformity of the wafer. The drying equipment adopted in the post-coating drying process and the drying equipment adopted in the post-exposure drying process are manufactured by adopting the same process, so that the second temperature distribution can be predicted by adopting the first temperature distribution, and the exposure energy in the exposure process is compensated according to the second temperature distribution; and the critical dimension uniformity of the wafer is improved.

Description

technical field [0001] The present application relates to the field of semiconductors, in particular, to a method, device, wafer, computer-readable storage medium and lithography equipment for improving the uniformity of critical dimensions of a wafer. Background technique [0002] In the 3D NAND process, the storage capacity per unit area is increased by continuously increasing the number of layers of NO (N refers to silicon nitride, O refers to silicon dioxide), and the 3D step structure ensures The contact hole can be smoothly connected to the gate line of each layer of NO, and there are complex material filling and annealing processes in the 3D NAND process. The design and process of 3D NAND cause the wafer to undergo huge deformation due to stress, and it changes continuously during the entire process, making it difficult to control. [0003] If the wafer becomes too large and irregular, it will cause the wafer to not be absorbed smoothly on the drying equipment of the...

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Problems solved by technology

[0004] The main purpose of this application is to provide a method, device, wafer, computer-readable storage medium and lithography equipment for improving the uniformity of critical dimensions of the wafer, so as to solve the problems caused by uneven drying and heating in the prior art. The problem of poor critical dimension uniformity of the wafer

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