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Method for obtaining compensation mask of photomask, exposure method and exposure system

An exposure method and photomask technology, which are applied in the field of exposure system to obtain the compensation mask of the photomask, to achieve the effect of improving the critical dimension, avoiding the excessive attenuation area, and improving the uniformity of the critical dimension

Pending Publication Date: 2021-11-16
CHANGXIN MEMORY TECH INC
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Problems solved by technology

[0005] The embodiment of the present application provides a method for obtaining a compensation mask for a photomask, an exposure method and an exposure system, which at least help to solve the problem of uniformity of the critical dimension of the photomask

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  • Method for obtaining compensation mask of photomask, exposure method and exposure system
  • Method for obtaining compensation mask of photomask, exposure method and exposure system
  • Method for obtaining compensation mask of photomask, exposure method and exposure system

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Embodiment Construction

[0028] It can be seen from the background art that the critical dimension uniformity of the photomask is poor.

[0029] The photomask has a critical dimension deviation in the exposure process with a small size, so it is thought to change the light intensity of the light passing through the photomask according to the critical dimension deviation, so as to achieve the purpose of compensating the critical dimension deviation of the photomask. Specifically:

[0030] figure 1 It is a structural schematic diagram corresponding to the steps of a method for compensating a photomask.

[0031] A method for compensating a photomask will now be described in detail. A method for compensating a photomask, comprising: providing a photomask 100, the photomask 100 comprising a photosensitive layer 102 and a patterned light-shielding layer 101, the patterned light-shielding layer 101 being located on the surface of the photosensitive layer 102; using an exposure machine The station performs...

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Abstract

The embodiment of the invention relates to the field of semiconductors, and provides a method for obtaining a compensation mask of a photomask, an exposure method and an exposure system. The method for obtaining the compensation mask of the photomask comprises the steps that: the photomask is provided, wherein the photomask comprises a photosensitive layer and a graphical shading layer, and the graphical shading layer is located on the surface of the photosensitive layer; a critical dimension deviation test is performed on the photomask by using an exposure machine to obtain a deviation area of the feature dimension of the photomask and a deviation value of the deviation area; and based on the deviation area and the deviation value, a compensation mask corresponding to the exposure machine table is formed, the compensation mask is internally provided with an attenuation area, the compensation mask is located between the photomask and an exposure light source in the exposure processing period through the photomask, and the attenuation area is right opposite to the deviation area, the attenuation area is used for attenuating the illumination intensity of light emitted by the exposure light source and reaching the deviation area through the attenuation area, and at least the critical dimension uniformity of the photomask can be improved.

Description

technical field [0001] The embodiments of the present application relate to the field of exposure, and in particular to a method for obtaining a compensation mask of a photomask, an exposure method, and an exposure system. Background technique [0002] In the manufacture of integrated circuits, a photomask is used to form a pattern on a silicon wafer. In the prior art, the photomask consists of a transparent photosensitive layer and a light shielding layer on the photosensitive layer. [0003] However, with the development of integrated circuits, the integrated circuit process needs to achieve sub-micron precision, and usually the image on the photomask is transferred to the silicon wafer. Such sub-micron accuracy requires that the critical dimension (CD, critical dimension) of the image printed on the wafer be strictly consistent in specification. However, it is well known in the semiconductor industry that lithography processes often exceed specification requirements due ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03F1/00
CPCG03F1/00
Inventor 丁德宝
Owner CHANGXIN MEMORY TECH INC
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