Manufacturing method of alignment mark of photoetching machine and wafer

Abstract

The invention relates to the technical field of semiconductors, in particular to a photoetching machine alignment mark manufacturing method and a wafer, the photoetching machine alignment mark manufacturing method comprises the following steps: providing a first photoetching plate, forming a first pattern and a second pattern on the first photoetching plate, respectively forming a first alignment mark and a second alignment mark in the exposure area of the wafer through the first pattern and the second pattern; providing a second photoetching plate, forming a third pattern and a fourth pattern on the second photoetching plate, forming a fourth alignment mark on which the second alignment mark is overlaid through the fourth pattern, and covering the first alignment mark through the third pattern; and providing a third photoetching plate, forming a fifth pattern on the third photoetching plate, and forming a third alignment mark on which the first alignment mark is overlaid through the fifth pattern. According to the manufacturing method of the alignment mark of the photoetching machine, the alignment precision and the yield of the alignment mark can be improved.

Description

technical field [0001] The present application relates to the technical field of semiconductors, in particular to a method for manufacturing an alignment mark of a photolithography machine and a wafer. Background technique [0002] Photolithography is a key process for precision pattern production in the semiconductor industry, because the pattern structure is micron or submicron level, and pattern overlay between different layers is required. The current wafer semiconductor products need three photolithography, the first photolithography is to make two alignment marks: the first mark and the second mark, the second photolithography is to engrave the second mark with the third mark sleeve, and the second photolithography The third lithography is to engrave the first mark with the fourth mark sleeve, because the second lithography is separated between the third lithography and the first lithography, so that the first mark made during the first lithography It is easy to be co...

AI Technical Summary

Problems solved by technology

The current wafer semiconductor products need three photolithography, the first photolithography is to make two alignment marks: the first mark and the second mark, the second photolithography is to engrave the second mark with the third mark sleeve, and the second photolithography The third lithography is to engrave the first mark with the fourth mark sleeve, because the second lithography is separated between the third lithography and the first lithography, so that the first mark made during the first lithography It is easy to be corroded by oxidant, which makes the resolution worse, making the signal worse and difficult to identify, resulting in poor overlay accuracy during the third photolithography, resulting in product rework or scrap

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