Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

High-sensitivity microwave microfluidic sensor based on improved defected ground structure

A defect-based structure and high-sensitivity technology, applied in the microwave field, can solve problems such as cost increase, and achieve the effects of reducing dosage, improving sensitivity and accurate dielectric constant detection.

Active Publication Date: 2022-03-25
HANGZHOU DIANZI UNIV
View PDF8 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Because the disturbance will cause the change of the resonant frequency and the quality (Q-factor) factor, we can adjust the position of the sample to control the sensitivity. It is usually easy to achieve high sensitivity, but we can only achieve detection at discrete resonant frequency points
In the off-resonance scenario, changes in transmission and reflection reveal changes brought about by the sample over broadband, but sample and device preparation is rigorous, implying increased cost

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • High-sensitivity microwave microfluidic sensor based on improved defected ground structure
  • High-sensitivity microwave microfluidic sensor based on improved defected ground structure
  • High-sensitivity microwave microfluidic sensor based on improved defected ground structure

Examples

Experimental program
Comparison scheme
Effect test

Embodiment

[0028] Example: Figure 1 to 2 As shown, based on the high-sensitivity microwave microfluidic sensor of the improved defective structure, a double-port device; a three-layer structure having a top layer, an intermediate layer, and a bottom layer; the SMA connecting head 4 located on the top layer is soldered in the microstrip line 5. On the side, the input and output terminal width of the microstrip wire is 1.63 mm, and the resistance welding portion is graded at 0.4 mm, and the microstrip line becomes a rectangle having a width of 2.6 mm in length of 3.8 mm. There are two gaps in the middle welding section of the microstrip line, soldered by 50 ohmic resistor components 2. The intermediate layer is Rogers 4350 dielectric plate 1. An improved DGS structure 7 is etched at the bottom layer. The spiral structure 8 is etched in the middle of the DGS structure to a square side length of 8 mm width of 0.4 mm, the spiral line width is 0.2 mm, and the helical line is connected to a square ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
widthaaaaaaaaaa
widthaaaaaaaaaa
lengthaaaaaaaaaa
Login to View More

Abstract

The invention discloses a high-sensitivity microwave micro-fluidic sensor based on an improved defected ground structure. The high-sensitivity microwave micro-fluidic sensor is a dual-port device. The substrate comprises a top layer, a middle layer and a bottom layer; the top layer comprises a microstrip line, two 50-ohm resistor elements and two SMA connectors, the microstrip line is provided with two notches, the notches are welded by the 50-ohm resistor elements, the microstrip line is provided with an input port and an output port, the input port and the output port are connected with the microstrip line and are used for being connected with the SMA connectors respectively, and the input port and the output port are connected with the SMA connectors respectively. The SMA connector is communicated with the vector network analyzer; the middle layer is a dielectric plate; the bottom layer comprises an improved defected ground structure, the improved defected ground structure comprises a spiral line and a DGS structure, a square ring is arranged between the spiral line and the edge of the DGS structure, a spiral line structure is arranged in the middle of the DGS structure, and PDMS with a microfluid channel formed inside is arranged on the spiral line structure. The sensor is high in sensitivity, wide in measurement range and small in detection error.

Description

Technical field [0001] The present invention relates to the field of microwave technologies, and is specifically based on high sensitivity microwave microwate control sensors that improve defective structures. Background technique [0002] In recent years, microwave sensors have been applied in many measurement and characterization platforms: such as mechanical displacement and rotary sensors, medical applications biosensor, structural health monitoring, solid dielectric properties, and dielectric constant measurements of liquid chemicals. The main advantages compared to other similar products such as optical or microsystems (MEMS) devices are passive, low cost and provide non-invasive detection. The re-dielectric constant is an important physical characteristic, which describes electrical behavior when the material is exposed to an external electromagnetic field, and can be obtained by microwave technology. When the type or concentration of the sample in the sensing area changes...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): G01N22/00G01N27/22B01L3/00
CPCG01N22/00G01N27/221B01L3/5027
Inventor 赵文生叶威王大伟王晶王高峰
Owner HANGZHOU DIANZI UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com