Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Self-supporting two-dimensional selenium oxide nanosheet array and preparation method thereof

A technology of nanosheet arrays and oxides, which is applied in chemical instruments and methods, nanotechnology, nanotechnology, etc., can solve the problems of difficult preparation and transfer of two-dimensional selenium oxide nanosheets, and achieve high quality and broad application prospects Effect

Pending Publication Date: 2022-03-18
YANGTZE DELTA REGION INST OF UNIV OF ELECTRONICS SCI & TECH OF CHINE HUZHOU
View PDF0 Cites 3 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The purpose of the present invention is to provide a self-supporting two-dimensional selenium oxide nanosheet array and its preparation method to solve the problem of difficulty in the preparation and transfer of the existing two-dimensional selenium oxide nanosheets

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Self-supporting two-dimensional selenium oxide nanosheet array and preparation method thereof
  • Self-supporting two-dimensional selenium oxide nanosheet array and preparation method thereof
  • Self-supporting two-dimensional selenium oxide nanosheet array and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0032] The preparation method of the self-supporting two-dimensional selenium oxide nanosheet array of this embodiment comprises the following steps:

[0033] (1) A single temperature zone horizontal tube furnace is used as the vapor deposition equipment. The tube length of the horizontal tube furnace is 120cm, the outer diameter is 25mm, the tube wall thickness is 1.8mm, and the range of the constant temperature zone is 5cm. In the upstream low temperature zone, bismuth oxide is placed in the central high temperature zone, and the sodium chloride substrate is placed in the downstream low temperature zone. The temperature in the upstream low temperature zone is 500°C, the temperature in the central high temperature zone is 600°C, the temperature in the downstream deposition zone is 450°C, and the heating rate is 10°C / min. The mass ratio of bismuth selenide and bismuth oxide is 2:1.

[0034] (2) Wash with 700 sccm argon for one hour before heating to remove residual oxygen in...

Embodiment 2

[0038] The preparation method of the self-supporting two-dimensional selenium oxide nanosheet array of this embodiment comprises the following steps:

[0039] (1) A single temperature zone horizontal tube furnace is used as the vapor deposition equipment. The tube length of the horizontal tube furnace is 120cm, the outer diameter is 25mm, the tube wall thickness is 1.8mm, and the range of the constant temperature zone is 5cm. In the upstream low temperature zone, bismuth oxide is placed in the central high temperature zone, and the sodium chloride substrate is placed in the downstream low temperature zone. The temperature in the upstream low temperature zone is 520°C, the temperature in the central high temperature zone is 630°C, the temperature in the downstream deposition zone is 480°C, and the heating rate is 10°C / min. The mass ratio of bismuth selenide and bismuth oxide is 1.5:1.

[0040] (2) Wash with 700 sccm argon for one hour before heating to remove residual oxygen ...

Embodiment 3

[0044] The preparation method of the self-supporting two-dimensional selenium oxide nanosheet array in this example is the same as that in Example 1, except that the temperature in the central high temperature zone is 700°C, the heating rate is 20°C / min, and the reaction time is 60min.

[0045] The self-supporting two-dimensional selenium oxide nanosheet array of the present invention is prepared by the preparation method of the two-dimensional selenium oxide nanosheet array in Example 1-3, and the obtained two-dimensional selenium oxide nanosheet has square and rectangular regular arrangements. Morphology, the lateral size is 2-6μm, and the thickness is 50-120nm.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
sizeaaaaaaaaaa
thicknessaaaaaaaaaa
sizeaaaaaaaaaa
Login to View More

Abstract

The invention discloses a preparation method of a self-supporting two-dimensional selenium oxide crystal array, and belongs to the technical field of semiconductor materials. The method comprises the following steps: placing bismuth selenide powder as a selenylation material in an upstream low-temperature area of a tubular furnace, gasifying the bismuth selenide powder by low-temperature evaporation, carrying the bismuth selenide to a central high-temperature area through carrier gas argon to carry out gas-phase chemical reaction with bismuth oxide, and depositing the bismuth selenide to a sodium chloride single crystal substrate in a downstream low-temperature area; and the two-dimensional bismuth selenide crystal array with consistent epitaxial orientation is formed. And then, spin-coating an organic polymer on the surface of the material, heating, and dissolving a sodium chloride single crystal substrate in deionized water after the organic polymer is cured, so as to obtain an organic polymer film adhered with the self-supporting two-dimensional selenium bismuth oxide array, and transferring the organic polymer film onto other substrates. According to the method, the preparation problem and the subsequent transfer problem of the two-dimensional selenium oxide nanosheet array are solved, the emerging material is expected to be applied to flexible devices and developed to wearable equipment, and the method has wide application prospects.

Description

technical field [0001] The invention relates to the technical field of preparation and transfer of epitaxial selenium oxide nanosheet arrays, in particular to a self-supporting two-dimensional bismuth selenium oxide nanosheet array and a preparation method thereof. Background technique [0002] Since 1950, monocrystalline silicon has been the leading semiconductor for the microelectronics industry. Following Moore's law, silicon-based electronics are also facing more and more challenges, such as reduced carrier mobility and increased short-channel effects at sub-10nm nodes. To overcome these disadvantages, two-dimensional (2D) semiconductors have become one of the most competitive candidates for next-generation electronics due to their inherent atomic thickness, flexibility, and dangling-bond-free surfaces. [0003] Among all two-dimensional semiconductors, the air-stable and high-mobility two-dimensional bismuth selenide (Bi 2 o 2 Se) semiconductor is a new type of terna...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C30B29/46C30B25/02C30B33/00B82Y40/00B82Y30/00
CPCC30B29/46C30B25/02C30B33/00B82Y40/00B82Y30/00
Inventor 乔梁丁翔
Owner YANGTZE DELTA REGION INST OF UNIV OF ELECTRONICS SCI & TECH OF CHINE HUZHOU
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com