Optoelectronic integrated chip and manufacturing method thereof

Abstract

The invention provides a photoelectronic integrated chip and a manufacturing method thereof. The photoelectronic integrated chip comprises a gain chip and a silicon optical chip spot-size converter, the gain chip comprises a passive waveguide part and an active waveguide part; a first thin film layer is grown below a passive waveguide region of the passive waveguide part, and a second thin film layer is grown below a quantum well gain region of the active waveguide part; a third thin film layer grows above a silicon waveguide of the silicon optical chip spot size converter; a TE fundamental mode supported by the passive waveguide part is greater than a mode field of a first threshold value; the TE fundamental mode supported by the active waveguide part is greater than a mode field of a second threshold value; the TE fundamental mode supported by the silicon optical chip spot size converter is larger than a mode field of a third threshold value. The problem that in the prior art, the end face coupling tolerance of an integrated light source on a silicon substrate is small through a hybrid integration technology is solved, high-efficiency coupling can be achieved, the butt joint tolerance is greatly increased, the tolerance can meet the precision of an automatic chip mounter, and passive end face butt joint coupling can be achieved.

Description

technical field [0001] The invention relates to the technical field of integrated photonics, in particular to an optoelectronic integrated chip and a manufacturing method thereof. Background technique [0002] The optoelectronic integration technology in which photonic devices and electronic devices are integrated on the same silicon chip can effectively solve many problems faced by microelectronic chips and continue Moore's Law. Silicon luminescence is a world problem that has lasted for half a century. At present, there are three main technical routes for integrating light sources on silicon substrates. The first is monolithic integration technology, that is, direct epitaxial growth of gain materials (quantum wells or quantum dots) on SOI. , although there has been a lot of progress, there is still no substantial breakthrough. The second is heterogeneous integration technology (heterogeneous integration), the technical solution is to bond the unprocessed III-V light-emitt...

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Problems solved by technology

[0004] In view of this, the embodiment of the present invention provides an optoelectronic integrated chip and its manufacturing method to solve the problem in the prior art that the light source is integrated on the silicon substrate through the hybrid integration technology, and there is a small end-face coupling tolerance

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