Optoelectronic integrated chip and manufacturing method thereof

An integrated chip and optoelectronic technology, applied in the field of integrated photonics, can solve the problem of small coupling tolerance of the end face, and achieve the effect of passive end face coupling

Pending Publication Date: 2022-03-08
UNITED MICROELECTRONICS CENT CO LTD
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] In view of this, the embodiment of the present invention provides an optoelectronic integrated chip and its manufacturing method to solve the problem in ...

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Optoelectronic integrated chip and manufacturing method thereof
  • Optoelectronic integrated chip and manufacturing method thereof
  • Optoelectronic integrated chip and manufacturing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0030] Embodiments of the present disclosure will be described in more detail below with reference to the accompanying drawings. Although certain embodiments of the present disclosure are shown in the drawings, it should be understood that the disclosure may be embodied in various forms and should not be construed as limited to the embodiments set forth herein; A more thorough and complete understanding of the present disclosure. It should be understood that the drawings and embodiments of the present disclosure are for exemplary purposes only, and are not intended to limit the protection scope of the present disclosure.

[0031] It should be understood that the various steps described in the method implementations of the present disclosure may be executed in different orders, and / or executed in parallel. Additionally, method embodiments may include additional steps and / or omit performing illustrated steps. The scope of the present disclosure is not limited in this respect. ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
Thicknessaaaaaaaaaa
Thicknessaaaaaaaaaa
Thicknessaaaaaaaaaa
Login to view more

Abstract

The invention provides a photoelectronic integrated chip and a manufacturing method thereof. The photoelectronic integrated chip comprises a gain chip and a silicon optical chip spot-size converter, the gain chip comprises a passive waveguide part and an active waveguide part; a first thin film layer is grown below a passive waveguide region of the passive waveguide part, and a second thin film layer is grown below a quantum well gain region of the active waveguide part; a third thin film layer grows above a silicon waveguide of the silicon optical chip spot size converter; a TE fundamental mode supported by the passive waveguide part is greater than a mode field of a first threshold value; the TE fundamental mode supported by the active waveguide part is greater than a mode field of a second threshold value; the TE fundamental mode supported by the silicon optical chip spot size converter is larger than a mode field of a third threshold value. The problem that in the prior art, the end face coupling tolerance of an integrated light source on a silicon substrate is small through a hybrid integration technology is solved, high-efficiency coupling can be achieved, the butt joint tolerance is greatly increased, the tolerance can meet the precision of an automatic chip mounter, and passive end face butt joint coupling can be achieved.

Description

technical field [0001] The invention relates to the technical field of integrated photonics, in particular to an optoelectronic integrated chip and a manufacturing method thereof. Background technique [0002] The optoelectronic integration technology in which photonic devices and electronic devices are integrated on the same silicon chip can effectively solve many problems faced by microelectronic chips and continue Moore's Law. Silicon luminescence is a world problem that has lasted for half a century. At present, there are three main technical routes for integrating light sources on silicon substrates. The first is monolithic integration technology, that is, direct epitaxial growth of gain materials (quantum wells or quantum dots) on SOI. , although there has been a lot of progress, there is still no substantial breakthrough. The second is heterogeneous integration technology (heterogeneous integration), the technical solution is to bond the unprocessed III-V light-emitt...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): H01S5/028H01S5/10H01S5/20H01S5/343
CPCH01S5/34346H01S5/2018H01S5/1003H01S5/0282
Inventor 刘祖文金里朱继光冯俊波曹睿
Owner UNITED MICROELECTRONICS CENT CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap