Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Preparation method of perovskite precursor solution and perovskite thin film

A perovskite precursor and perovskite technology, which is applied in semiconductor/solid-state device manufacturing, electric solid-state devices, semiconductor devices, etc., can solve problems such as complex methods, achieve simple process costs, avoid uneven nucleation, prolong Effect of wet film post-processing time window

Pending Publication Date: 2022-03-01
SICHUAN NEW MATERIAL RES CENT
View PDF2 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The above method is to prepare perovskite thin films by adding anti-solvent or specific imprinting and cooling. The method is complicated, and the problem of uneven nucleation of perovskite caused by solvent volatilization cannot be avoided, and further improvement is needed.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Preparation method of perovskite precursor solution and perovskite thin film
  • Preparation method of perovskite precursor solution and perovskite thin film
  • Preparation method of perovskite precursor solution and perovskite thin film

Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0035] The preparation method of perovskite film of the present invention comprises the following steps:

[0036] a, providing the above-mentioned perovskite precursor solution;

[0037] b. Film production: apply the perovskite precursor solution on the substrate to obtain a wet film, then process the wet film to obtain a perovskite dry film, and finally perform annealing to obtain a perovskite film.

[0038] Commonly used methods of applying solutions to substrates can be used in the present invention. In some embodiments of the present invention, the perovskite precursor solution is coated on the substrate by coating, blade coating or spin coating.

[0039] The substrate material is a conventional material in the art, including but not limited to rigid substrates such as glass substrates and flexible plastic substrates, such as polyimide (PI), polyamide (PA), polyethylene terephthalate (PET), Polytetrafluoroethylene (PTFE), polypropylene (PP), various modified polystyrene ...

Embodiment 1

[0043] A mixed solvent with a component of DMF:NMP=1:0.05 is used, and the solute component is Cs 0.2 FA 0.8 Pb(I 0.95 Br 0.05 ) 3 perovskite precursor solution, the concentration of the solution is 0.5mol / L, and the perovskite film is prepared by using the method of scrape coating and gas blowing. The surface SEM image of the obtained film is shown in figure 1 , it can be seen that there is no hole on the surface of the film and the coverage is comprehensive.

Embodiment 2

[0045] Adopt the mixed solvent that the component is DMF:NMP=1:0.10, equip the solute component as Cs 0.2 FA 0.8 Pb(I0.95 Br 0.05 ) 3 perovskite precursor solution, and the perovskite film was prepared by using the scrape coating process and blowing assistance method, the surface SEM image of the obtained film is shown in figure 2 , it can be seen that there is no hole on the surface of the film, and the coverage is comprehensive, but there are a few impurity grains on the surface.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Concentrationaaaaaaaaaa
Login to View More

Abstract

The invention relates to a preparation method of a perovskite precursor solution and a perovskite thin film, and belongs to the technical field of perovskite solar cells. The technical problem to be solved by the invention is to provide the perovskite precursor solution. The perovskite precursor solution comprises a perovskite material and a mixed solvent, the mixed solvent is DMF (Dimethyl Formamide) and NMP (N-Methyl Pyrrolidone), and the volume ratio of the DMF to the NMP is 1: (0.01-0.13). According to the perovskite precursor solution, the problem of uneven perovskite nucleation caused by solvent volatilization can be avoided, a wet film post-treatment time window is prolonged, and large-area uniform film formation of perovskite prepared by a solution method is realized. The solution is used for preparing the perovskite thin film, the process is simple, the cost is low, the film forming window time, the thin film morphology and the uniformity degree of the thin film can be adjusted by adjusting the ratio of DMF to NMP, the solution is suitable for coating, blade coating and roll-to-roll printing technologies for large-area preparation of the perovskite thin film, the preparation process is simple and easy to control, and the method is suitable for large-area preparation of the perovskite thin film. And commercial manufacturing of large-area perovskite solar cells and assemblies is facilitated.

Description

technical field [0001] The invention relates to a preparation method of a perovskite precursor solution and a perovskite thin film, and belongs to the technical field of perovskite solar cells. Background technique [0002] Due to the excellent optoelectronic characteristics and low cost, perovskite thin films and their device research have attracted extensive attention. For example, perovskite thin films have shown great potential in photovoltaic cells, LEDs, etc. At present, the most commonly used preparation method of perovskite thin films is the coating method, that is, the perovskite precursor solution is coated on the substrate, thereby preparing perovskite thin films. The method has the advantages of simple operation, low cost, large area and the like. [0003] The existing perovskite solvent system is difficult to achieve rapid, uniform and large-area dry film and nucleation, crystal growth and film formation of the wet film formed after the perovskite solution coa...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L51/48
CPCH10K71/15Y02E10/549
Inventor 马青山王鹏杨宁蔡冰周斌
Owner SICHUAN NEW MATERIAL RES CENT
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com