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Water cooling screen, monocrystalline silicon growth device and monocrystalline silicon growth method

A water-cooled screen and monocrystalline silicon technology, which is applied in the field of monocrystalline silicon growth devices and water-cooled screens, can solve the problems of reducing the axial temperature gradient of silicon rods, slowing down the growth speed of silicon rods, and slowing down the heat transfer rate, etc.

Pending Publication Date: 2022-01-28
双良硅材料(包头)有限公司
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

During the growth process of silicon rods, the cooling water in the lower part of the water-cooled screen first exchanges heat with the silicon rods to raise the temperature. When growing to the upper part of the water cooling screen, the heat transfer rate slows down, thereby reducing the axial temperature gradient of the silicon rod and slowing down the growth rate of the silicon rod

Method used

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  • Water cooling screen, monocrystalline silicon growth device and monocrystalline silicon growth method
  • Water cooling screen, monocrystalline silicon growth device and monocrystalline silicon growth method
  • Water cooling screen, monocrystalline silicon growth device and monocrystalline silicon growth method

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Embodiment Construction

[0030] The core of the present invention is to disclose a water-cooling screen, which can improve the heat exchange rate of the water-cooling screen, increase the axial temperature gradient during the growth of the silicon rod, and further improve the growth rate of single crystal silicon.

[0031] Another core of the present invention is to disclose a single crystal silicon growth device with the above-mentioned water cooling screen.

[0032] Another core of the present invention is to disclose a single crystal silicon growth method used in the above single crystal silicon growth device.

[0033] In order to make those skilled in the art better understand the solutions of the present invention, the following describes the embodiments of the present invention with reference to the accompanying drawings. In addition, the embodiments shown below do not have any limiting effect on the content of the invention described in the claims. In addition, the whole content of the structu...

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Abstract

The embodiment of the invention discloses a water cooling screen, which comprises a water cooling screen body and a cooling water path arranged in the water cooling screen body, wherein the cooling water path at least comprises two cooling water path branches, the cooling water path branches are mutually independent, and the cooling water path branch at the corresponding position is in a low-temperature state when a silicon rod rises to a certain height by controlling the water supply time or the water supply flow of cooling water. According to the water cooling screen provided by the invention, the heat exchange rate of the water cooling screen can be improved through time-sharing and component water supply, so that the axial temperature gradient during growth of a silicon rod is increased, and the growth speed of monocrystalline silicon is effectively improved. The embodiment of the invention also discloses a monocrystalline silicon growth device and a monocrystalline silicon growth method.

Description

technical field [0001] The present invention relates to the technical field of single crystal silicon manufacturing equipment, in particular to a water cooling screen, a single crystal silicon growth device and a single crystal silicon growth method. Background technique [0002] At present, the cost of raw materials and auxiliary materials in the photovoltaic industry remains high, which seriously restricts the cost reduction and grid parity of the photovoltaic industry. In this context, the industry is developing towards the direction of large-sized crystal rods and silicon rods with high output ratio, in order to achieve the purpose of reducing costs and increasing efficiency. [0003] In the current process of preparing single crystal silicon by the Czochralski method, how to increase the growth rate of single crystal silicon to increase the output of silicon rods per unit time is a key problem that needs to be overcome. During the growth of single crystal silicon, the ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B15/00C30B15/20C30B29/06
CPCC30B15/00C30B15/20C30B29/06
Inventor 王新强张存江白建涛
Owner 双良硅材料(包头)有限公司
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