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A low-scattering metasurface array capable of suppressing time-domain sputtering effects and its design method

A meta-surface, low-scattering technology, applied in the direction of antennas, electrical components, etc., can solve problems such as sputtering, achieve high application prospects, and suppress the effects of time-domain sputtering effects

Active Publication Date: 2022-06-28
SOUTHEAST UNIV
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Problems solved by technology

[0005] Technical problem: The purpose of the present invention is to solve the problem of sputtering that traditional low-scattering materials will produce under sinusoidal wave incidence

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  • A low-scattering metasurface array capable of suppressing time-domain sputtering effects and its design method
  • A low-scattering metasurface array capable of suppressing time-domain sputtering effects and its design method
  • A low-scattering metasurface array capable of suppressing time-domain sputtering effects and its design method

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Embodiment Construction

[0027] The present invention will be further described below with reference to the accompanying drawings and embodiments.

[0028] Fourier transform was used to analyze the main factors affecting the sputtering effect in the time domain, and the following conclusions were drawn: the wider the low scattering bandwidth of the array, the shorter the duration of the sputtering effect in the time domain; the lower the out-of-band reflectance of the array, the The maximum value of its time-domain sputtering effect is smaller.

[0029] In order to realize the suppression of the sputtering effect in the time domain, the present invention designs a metasurface array M1 composed of metasurface units with wider bandwidth and lower out-of-band reflectivity. like figure 1 As shown, the metasurface unit includes a cross-shaped resistive film on the upper layer, a dielectric layer on the middle layer and a metal backplane layer on the bottom layer. The parameters of the metasurface element...

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Abstract

The invention discloses a low-scattering metasurface array capable of effectively suppressing the time-domain sputtering effect and a design method thereof, which is composed of an electromagnetic anisotropic unit structure, and the unit structure includes a resistive film structure layer, an intermediate dielectric layer and a metal backplane Floor. The resistive film structure layer adopts a cross-shaped structure. By adjusting the arm length and width of the cross-shaped structure and the surface resistance of the film resistor, the reflectivity curve of the unit and the duration and maximum value of the time-domain sputtering effect can be effectively adjusted. The metasurface not only has low scattering properties in the frequency domain, but also has the function of suppressing the time-domain sputtering effect in the time domain. Therefore, the metasurface has the stealth function in both frequency domain and time domain.

Description

technical field [0001] The invention belongs to the field of electromagnetic stealth, and particularly relates to a low-scattering metasurface array capable of suppressing the sputtering effect in the time domain and a design method thereof. Background technique [0002] With the development of modern radio technology and radar detection technology, traditional combat weapons are more and more threatened. In order to improve the survival and penetration capabilities of weapon systems, stealth technology has become a research hotspot in modern science and technology. Stealth technology is a technology that realizes stealth by studying and using various technical means to change the detectable information characteristics of one's own targets. [0003] At present, many stealth technologies have been proposed for traditional frequency domain detection methods, such as: shape design technology, new material technology, cancellation technology, etc. Through these stealth technol...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01Q15/00
CPCH01Q15/0086H01Q15/0046
Inventor 程强杨瑞崔铁军
Owner SOUTHEAST UNIV
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