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Low-scattering metasurface array capable of inhibiting time domain sputtering effect and design method thereof

A meta-surface, low-scattering technology, applied to electrical components, antennas, etc., can solve problems such as sputtering, achieve high application prospects, and suppress time-domain sputtering effects

Active Publication Date: 2021-12-03
SOUTHEAST UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] Technical problem: The purpose of the present invention is to solve the problem of sputtering that traditional low-scattering materials will produce under sinusoidal wave incidence

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  • Low-scattering metasurface array capable of inhibiting time domain sputtering effect and design method thereof
  • Low-scattering metasurface array capable of inhibiting time domain sputtering effect and design method thereof
  • Low-scattering metasurface array capable of inhibiting time domain sputtering effect and design method thereof

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Embodiment Construction

[0027] The present invention will be further described below in conjunction with the accompanying drawings and embodiments.

[0028] The main factors affecting the time-domain sputtering effect were analyzed by Fourier transform, and the following conclusions were drawn: the wider the low-scattering bandwidth of the array, the shorter the duration of the time-domain sputtering effect; the lower the out-of-band reflectivity of the array, The smaller the maximum value of the sputtering effect in the time domain.

[0029] In order to suppress the sputtering effect in the time domain, the present invention designs a metasurface array M1 composed of metasurface units with wider bandwidth and lower out-of-band reflectivity. Such as figure 1 As shown, the metasurface unit includes an upper cross-shaped resistive film, a middle dielectric layer and a bottom metal backplane layer. The specific setting of the parameters of the metasurface unit: p 1 = 20mm, l 1 =12mm, w 1 = 1.5mm, h...

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Abstract

The invention discloses a low-scattering metasurface array capable of effectively inhibiting a time domain sputtering effect and a design method thereof, the low-scattering metasurface array is composed of an electromagnetic anisotropic unit structure, and the unit structure comprises a resistive film structure layer, an intermediate dielectric layer and a metal backboard layer. The resistance film structure layer adopts a cross-shaped structure, and the reflectivity curve of the unit and the duration and maximum value of the time domain sputtering effect can be effectively adjusted and controlled by adjusting the arm length and width of the cross-shaped structure and the surface resistance of the film resistor. The metasurface not only has a low scattering characteristic in a frequency domain, but also has a function of inhibiting a time domain sputtering effect in a time domain. Therefore, the metasurface has a stealth function in both the frequency domain and the time domain.

Description

technical field [0001] The invention belongs to the field of electromagnetic stealth, and in particular relates to a low-scattering metasurface array capable of suppressing time-domain sputtering effects and a design method thereof. Background technique [0002] With the development of modern radio technology and radar detection technology, traditional combat weapons are increasingly threatened. In order to improve the survival and penetration capabilities of weapon systems, stealth technology has become a research hotspot in modern science and technology. Stealth technology is a technology that realizes stealth by researching and using various technical means to change the detectable information characteristics of one's own targets. [0003] At present, many stealth technologies have been proposed for traditional frequency-domain detection methods, such as shape design technology, new material technology, and cancellation technology. Through these stealth technologies, th...

Claims

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Application Information

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IPC IPC(8): H01Q15/00
CPCH01Q15/0086H01Q15/0046
Inventor 程强杨瑞崔铁军
Owner SOUTHEAST UNIV
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