Optical memory based on Rudin-Chaffino photonic crystal

A technology of optical memory and photonic crystal, which is applied in the field of all-optical communication, and can solve problems such as lowering the bistable threshold

Pending Publication Date: 2021-12-03
HUBEI UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The optical Kerr effect is proportional to the strength of the local electric field, so a strong local electric field can increase the third-order nonlinear effect of the material, thereby reducing the threshold of the bistability

Method used

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  • Optical memory based on Rudin-Chaffino photonic crystal
  • Optical memory based on Rudin-Chaffino photonic crystal
  • Optical memory based on Rudin-Chaffino photonic crystal

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Embodiment Construction

[0023] The following are specific embodiments of the present invention and in conjunction with the accompanying drawings, the technical solutions of the present invention are further described, but the present invention is not limited to these embodiments.

[0024] Mathematically, the iteration rule of Rudin-Shapiro (Rudin-Shapiro: RS) sequence is: S 0 = H, S 1 =HH,S 2 =HHHL,S 3 =HHHLHHLH,...,S N = S N-1 (HH→HHHL, HL→HHLH, LH→LLHL, LL→LLLH), ..., where N (N=0, 1, 2, 3, ...) represents the serial number of the sequence, S N Represents the Nth item of the sequence, HH→HHHL represents the S N-1 Replace HH in HHHL with HHHL.

[0025] figure 1 Shown is a schematic diagram of the composite structure of two binary RS photonic crystals with sequence number N=3 and graphene. Two binary RS photonic crystals are distributed symmetrically about the origin, which can be expressed as: HHHLHHLHHLHHGHHH, where the letters H and L represent two homogeneous dielectric sheets with high a...

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Abstract

The invention provides an optical memory based on a Rudin-Chaffino photonic crystal, and belongs to the technical field of all-optical communication. The optical memory comprises a plurality of first dielectric layers, a plurality of second dielectric layers and two graphene single layers, the first dielectric layers are marked as H, the second dielectric layers are marked as L, the graphene single layers are marked as G. The layered structure of the optical memory is represented as HHHLH1GL2HHL2GL1HHLHHH, L1GL2 and L2GL1 both represent three-layer structures formed by embedding the graphene single layers into the second dielectric layers, the thicknesses of the first dielectric layer and the second dielectric layer are respectively 1/4 of respective optical wavelengths, and the first dielectric layer and the second dielectric layer are respectively two uniform dielectric sheets with different refractive indexes; the optical memory based on the Ludine-Chaffino photonic crystal can realize a low-threshold optical bistable state, and an upper threshold and a lower threshold of the bistable state respectively correspond to a write-in judgment threshold and a read judgment threshold of the optical memory. The product has the advantages of being applicable to optical memories and the like.

Description

technical field [0001] The invention belongs to the technical field of all-optical communication, and relates to an optical memory based on Rudin-Shapino photonic crystals. Background technique [0002] In all-optical communication, information needs to be stored, transmitted, relayed, timed, amplified, and reshaped in the optical domain. is one of the important categories. Optical bistability is a nonlinear optical effect based on the optical Kerr effect of materials. When the incident light is strong enough, one input light intensity value can correspond to two different output light intensity values, that is, one incident light intensity value can induce two stable output resonance states. [0003] When the optical bistable state is applied to optical storage, the upper and lower thresholds of the bistable state correspond to the decision thresholds of writing and reading of the optical storage respectively; The light intensity is stronger. However, as the power of th...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G02F3/02G02B1/00
CPCG02F3/024G02B1/005
Inventor 方明
Owner HUBEI UNIV OF SCI & TECH
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