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Semiconductor growth equipment and working method thereof

A semiconductor and equipment technology, applied in the field of semiconductor growth equipment, can solve the problems of high optimal growth temperature range and narrow use range, etc., and achieve the effect of reducing the growth temperature range and expanding the use range

Active Publication Date: 2021-11-26
SUZHOU EVERBRIGHT PHOTONICS CO LTD +1
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  • Abstract
  • Description
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  • Application Information

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Problems solved by technology

[0004] Therefore, the technical problem to be solved by the present invention is to overcome the problems of high optimum growth temperature range and narrow application range of semiconductor growth equipment in the prior art, thereby providing a semiconductor growth equipment and its working method

Method used

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  • Semiconductor growth equipment and working method thereof
  • Semiconductor growth equipment and working method thereof
  • Semiconductor growth equipment and working method thereof

Examples

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Embodiment Construction

[0038] There are three main types of MOCVD reaction chambers, which are planetary air cushion rotating horizontal reaction chambers, high-speed rotating disk reaction chambers, and close-coupled spray reaction chambers.

[0039] In the planetary air cushion rotating horizontal reaction chamber, when the Group III reaction gas source and the Group V reaction gas source are used, the Group III reaction gas source and the Group V reaction gas source enter the reaction chamber from the three-laminar flow nozzle on the upper cover respectively, and pass through the grid The grid is forced to turn and flow radially to the outer edge horizontally along the 360-degree annular space between the base on which the substrate is placed and the ceiling, and flows out through the perforated quartz side ring. The base is a graphite base and the ceiling is a quartz ceiling. or graphite canopy. This flow pattern eliminates the sidewalls of the horizontal reaction chamber and therefore sidewall ...

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Abstract

The invention provides semiconductor growth equipment and a working method thereof. The semiconductor growth equipment comprises a reaction chamber, a heating base, a first spraying unit and a second spraying unit; the heating base is located in the reaction chamber and comprises a first heating area and a second heating area located on the periphery of the side portion of the first heating area, the heating temperature of the first heating area is larger than that of the second heating area, and the surface of the second heating area is suitable for containing a substrate; the first spraying unit and the second spraying unit are located at the top of the reaction chamber, the first spraying unit is located above the first heating area, and the second spraying unit is located above the second heating area; the first spraying unit at least comprises a first pipeline, a first gas source is suitable for being introduced into the first pipeline, the second spraying unit at least comprises a second pipeline, a second gas source is suitable for being introduced into the second pipeline, and the decomposition temperature of the first gas source is higher than that of the second gas source. The optimal growth temperature interval of the semiconductor growth equipment is reduced, and the application range is expanded.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a semiconductor growth device and a working method thereof. Background technique [0002] Semiconductor devices such as semiconductor lasers, high electron mobility transistors, photodetectors, etc. are often produced by epitaxial growth technology, and the two most common epitaxial technologies are metal-organic chemical vapor deposition (MOCVD) and molecular beam epitaxy (MBE). . Compared with MBE, MOCVD is more suitable for large-scale commercial production due to its advantages of good growth stability, easy maintenance, and high output. In recent years, its market share has been increasing year by year. Although MOCVD has the above advantages over MBE, the optimum growth temperature range of the semiconductor growth equipment used by MOCVD is significantly higher than that used by MBE. Therefore, many materials that need to be grown at low temperatures cannot be grow...

Claims

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Application Information

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IPC IPC(8): C23C16/46C23C16/455C23C16/52C23C16/30H01L21/02H01L21/67
CPCC23C16/46C23C16/45565C23C16/45574C23C16/52C23C16/301H01L21/0262H01L21/67017H01L21/67103C23C16/4581C23C16/4584C23C16/45514C23C16/4586C30B25/14C30B29/40C30B25/10
Inventor 王俊程洋肖啸郭银涛苟于单
Owner SUZHOU EVERBRIGHT PHOTONICS CO LTD
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