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Method for forming oxide layer

An oxide layer and oxidizing technology, applied in the field of solar cells, can solve the problem of the need to further improve the compactness of the oxide layer, and achieve the effects of excellent thickness and compactness, low attenuation value, and good internal and external consistency

Inactive Publication Date: 2021-11-02
HENGDIAN GRP DMEGC MAGNETICS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] However, the above schemes need to be further improved in terms of the compactness of the oxide layer.

Method used

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  • Method for forming oxide layer
  • Method for forming oxide layer

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0062] This embodiment forms the oxide layer according to the following method:

[0063] 1) Into the boat (put the silicon wafer used for solar cells in the quartz boat first, and then put the quartz boat in the reactor): temperature 600°C, nitrogen gas 15000sccm, pressure 1060mbar, time 700s;

[0064] 2) Heating: temperature 700°C, nitrogen flow 15000sccm, pressure 1060mbar, time 500s;

[0065] 3) Vacuuming: temperature 700°C, pressure 0, time 200s;

[0066] 4) Oxidation: temperature 700°C, pressure 300mbar, oxygen 1000sccm, time 1200s;

[0067] 5) Vacuuming: the temperature is 700°C, the pressure is 0, and the time is 200s;

[0068] 6) Back pressure: temperature 600°C, nitrogen flow 15000sccm, pressure 1060mbar, time 90s;

[0069] 7) Cooling: 600°C, 15000sccm nitrogen flow, 1060mbar pressure, 300s time;

[0070] 8) Out of the boat (take out the quartz boat and the silicon wafer with the oxide layer): blow nitrogen gas at 15000 sccm for 700 s.

Embodiment 2

[0072] This embodiment forms the oxide layer according to the following method:

[0073] 1) Into the boat (put the silicon wafer used for solar cells in the quartz boat first, and then put the quartz boat in the reactor): temperature 600°C, nitrogen gas 15000sccm, pressure 1060mbar, time 700s;

[0074] 2) Heating: temperature 700°C, nitrogen flow 15000sccm, pressure 1060mbar, time 500s;

[0075] 3) Vacuuming: temperature 700°C, pressure 0, time 200s;

[0076] 4) Oxidation: temperature 700°C, pressure 500mbar, oxygen 1000sccm, time 1200s;

[0077] 5) Vacuuming: the temperature is 700°C, the pressure is 0, and the time is 200s;

[0078] 6) Back pressure: temperature 600°C, nitrogen flow 15000sccm, pressure 1060mbar, time 90s;

[0079] 7) Cooling: 600°C, 15000sccm nitrogen flow, 1060mbar pressure, 300s time;

[0080] 8) Out of the boat (take out the quartz boat and the silicon wafer with the oxide layer): blow nitrogen gas at 15000 sccm for 700 s.

Embodiment 3

[0082] This embodiment forms the oxide layer according to the following method:

[0083] 1) Into the boat (put the silicon wafer used for solar cells in the quartz boat first, and then put the quartz boat in the reactor): temperature 600°C, nitrogen gas 15000sccm, pressure 1060mbar, time 700s;

[0084] 2) Heating: temperature 700°C, nitrogen flow 15000sccm, pressure 1060mbar, time 500s;

[0085] 3) Vacuuming: temperature 700°C, pressure 0, time 200s;

[0086] 4) Oxidation: temperature 700°C, pressure 800mbar, oxygen 1000sccm, time 1200s;

[0087] 5) Vacuuming: the temperature is 700°C, the pressure is 0, and the time is 200s;

[0088] 6) Back pressure: temperature 600°C, nitrogen flow 15000sccm, pressure 1060mbar, time 90s;

[0089] 7) Cooling: 600°C, 15000sccm nitrogen flow, 1060mbar pressure, 300s time;

[0090] 8) Out of the boat (take out the quartz boat and the silicon wafer with the oxide layer): blow nitrogen gas at 15000 sccm for 700 s.

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Abstract

The invention provides a method for forming an oxide layer. The method comprises the following steps: (1) placing a silicon wafer for a solar cell in a reactor, introducing nitrogen and heating; (2) heating the reactor in the step (1) in protective gas, and then vacuumizing; (3) introducing an oxidizing gas into the reactor vacuumized in the step (2), carrying out an oxidation reaction, and then vacuumizing the reactor; and (4) introducing the protective gas into the reactor in the step (3) for pressure return, then cooling in the protective gas, and taking out the silicon wafer with the oxide layer. According to the method provided by the invention, the internal and external consistency of the oxide layer is better, the thickness and compactness of the oxide layer are better, the passivation effect is better, and finally, the conversion efficiency of the solar cell is higher.

Description

technical field [0001] The invention belongs to the technical field of solar cells and relates to a method for forming an oxide layer, in particular to a method for forming an oxide layer capable of improving the compactness of the oxide layer. Background technique [0002] PERC battery (Passivated Emitter and Rear Cell) is a structure of battery. It originated in the 1980s. In 1989, the Martin Green research group of the University of New South Wales in Australia formally reported the PERC battery structure for the first time in Applied Physics Letter. At that time, it reached a laboratory battery efficiency of 22.8%. [0003] At present, the efficiency advantage of monocrystalline PERC cells has not been obvious. Recently, new technologies such as Topcon and HJT have been favored by major companies. Jolywood, Junshi, Jinke, etc. have HJT production lines, and Topcon technology is more suitable. At present, the production line of PERC battery can be quickly switched only b...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/0216H01L31/18
CPCH01L31/02167H01L31/1868Y02E10/50Y02P70/50
Inventor 郑正明任永伟何悦
Owner HENGDIAN GRP DMEGC MAGNETICS CO LTD
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