Method for extracting nonlinear behavior model of radio frequency microwave two-port device
An extraction method and two-port technology, which is applied in the field of nonlinear behavior model extraction of RF and microwave two-port devices, can solve the problem that S parameters cannot characterize the nonlinear characteristics of the fundamental wave response of RF and microwave devices
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[0030] The nonlinear behavior model is extracted for the GaAs monolithic integrated low-noise amplifier chip BW295 developed and produced by CLP Thirteen.
[0031] The first step is to perform vector calibration and power calibration on the vector network analyzer.
[0032] First perform on-chip vector calibration of the vector network analyzer between 2 GHz and 7 GHz; then perform power calibration to set the input power of the amplifier P in From -25 dBm to -1 dBm, step by 1 dBm, save calibration files under different power levels.
[0033] The second step is to test the power-related S-parameters.
[0034] Input power at -25 dBm P in Next, call the calibration file corresponding to the -25 dBm excitation to set the vector network analyzer, obtain the S parameters of the DUT, and store them as S parameters 110 under the minimum excitation power. Scan the excitation power, and call the calibration files under different powers to set the vector network analyzer, and measu...
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