Vapor phase growth device and carrier used in same

Abstract

Provided is a vapor phase growth device by which the thickness of a CVD film on the edge of a wafer can be made uniform. A carrier (C) is formed into an endless ring shape and includes: a bottom surface (C11) mounted on the top surface of a susceptor (112); a top surface (C12) that contacts the outer edge of the rear surface of a wafer (WF) and supports same; an outer circumferential wall surface (C13); and an inner circumferential wall surface (C14). The structure or shape of the top surface (C12) in the circumferential direction is a structure or shape having a correspondence relationship with respect to the crystal orientation in the circumferential direction of the wafer (WF). A wafer that has yet to be processed is mounted on the carrier such that the crystal orientation in the circumferential direction of the wafer that has yet to be processed and the structure or shape of the wafer in the circumferential direction have a correspondence relationship.

Description

technical field [0001] The present invention relates to a vapor phase growth apparatus used in the manufacture of epitaxial wafers, etc., and a carrier used in the vapor phase growth apparatus. Background technique [0002] In a vapor phase growth apparatus used in the manufacture of epitaxial wafers, etc., in order to minimize damage to the back surface of the silicon wafer, it is proposed that the silicon wafer be mounted on a ring-shaped carrier in the state from the load lock chamber to the Transport in the process of the reaction chamber (Patent Document 1). [0003] In such a vapor phase growth apparatus, unprocessed wafers are mounted on an annular carrier waiting in the load lock chamber, while processed wafers are transported from the reaction chamber while being mounted on the annular carrier. Transfer to the load lock. [0004] Patent Document 1: US Patent Application Publication No. 2017 / 0110352. [0005] Patent Document 2: Japanese Patent Laid-Open No. 2007-2...

AI Technical Summary

Problems solved by technology

[0006] However, in the ring-shaped carrier of the above-mentioned prior art, the sharp change in the film thickness of the epitaxial film formed on the peripheral edge of the single crystal silicon wafer cannot be suppressed, so there is a problem that it is particularly difficult to planarize the peripheral edge.

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