Semiconductor process equipment and mixed gas inlet device thereof

Abstract

The embodiment of the invention provides semiconductor process equipment and a mixed gas inlet device thereof. The mixed gas inlet device comprises a mixed gas inlet block and a cover body assembly; a first annular cavity and multiple gas inlet channels are formed in the mixed gas inlet block, the top of the first annular cavity communicates with the multiple gas inlet channels, and the bottom of the first annular cavity communicates with a gas mixing channel in the cover body assembly; the multiple gas inlet channels extend in the tangential direction of the first annular cavity, and gas outlets of the multiple gas inlet channels are evenly distributed in the circumferential direction of the first annular cavity; and the mixed gas inlet block is arranged in the middle of the top of the cover body assembly, the bottom of the cover body assembly covers the top of a process chamber, and the gas mixing channel is formed in the cover body assembly and used for re-mixing process gas in the mixed gas inlet block and inputting the process gas into the process chamber after uniform flow. According to the embodiment of the invention, the concentration distribution of the process gas is effectively improved before the process gas reaches the surface of a wafer so that the film forming uniformity of the wafer can be greatly improved while the process time is effectively shortened.

Description

technical field [0001] The present application relates to the technical field of semiconductor processing, and in particular, the present application relates to a semiconductor process equipment and a mixed air intake device thereof. Background technique [0002] At present, the atomic layer deposition (Atomic layer deposition, ALD) process is a relatively advanced thin film deposition process. As the line width reaches 7nm and 5nm, the use of ALD to deposit thin films will become more and more widely used, such as Al 2 o 3 , HfO, HfZrO, TaN, TiN, TaO and W thin films can be applied to most integrated circuit (IC) fields, such as logic devices, dynamic random access memory (DRAM), 3D flash memory, etc. The advantages of the ALD process are self-limited periodic growth, excellent film quality, and excellent step coverage, but the low growth rate and long process time will greatly affect the productivity of the equipment. [0003] In the current mainstream ALD process equipm...

AI Technical Summary

Problems solved by technology

[0004] In view of the shortcomings of the existing methods, the present application proposes a semiconductor process equipment and its mixed gas inlet device to solve the problems of low process gas mixing efficiency and poor uniformity of wafer film formation caused by low gas mixing efficiency in the prior art technical issues

Images