Sputtering device and method with adjustable film stress

Abstract

The invention provides a sputtering device and method capable of adjusting film stress. The equipment includes a cavity, a magnetron sputtering device, a baffle, a wafer pressure ring, a base and an electromagnetic coil module; one end of the wafer pressure ring is adjacent to the baffle, and the other end extends above the edge of the base; the base and The bias power supply is connected; the electromagnetic coil module is located in the base and / or between the wafer pressure ring and the base, and includes a plurality of electromagnetic coil groups, wherein each electromagnetic coil group includes an N pole electromagnet and an S pole electromagnet, The N-pole electromagnet in a single electromagnetic coil group is adjacent to the left side of the S-pole electromagnet, and the N-pole magnetic pole surface of the N-pole electromagnet and the S-pole magnetic pole surface of the S-pole electromagnet face up or down at the same time; During the shooting process, multiple electromagnetic coils are divided into multiple energized units, and the multiple energized units are alternately turned on and off in a clockwise or counterclockwise direction, so as to deposit a film on the surface of the substrate and adjust the stress of the film. The invention helps to improve the uniformity of film thickness and stress distribution.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to thin film deposition equipment, in particular to a sputtering equipment and method capable of adjusting thin film stress. Background technique [0002] During the fabrication of semiconductor devices, the stress of the deposited film is a problem that must be paid attention to. If the stress of the film cannot be controlled within a reasonable range, it will cause cracks in the film, and even lead to defects such as shedding in severe cases, resulting in shortened service life of the device. Therefore, the device has very high requirements on the uniformity of the film, especially the stress uniformity and crystal structure consistency of the metal nitride film, such as the aluminum nitride film. At present, the most difficult thing in stress control is to ensure stress uniformity. Using the aluminum nitride film deposited by the mainstream equipment on the market, the st...

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Problems solved by technology

[0003] In view of the above-mentioned shortcoming of the prior art, the object of the present invention is to provide a kind of sputtering equipment and method that can adjust film stress, be used for solving the problems in depositing film in the prior art, especially deposit such as metal nitrogen such as aluminum nitride It is difficult to ensure the uniformity of the stress of the film when using the compound film.

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