A guide tube and crystal pulling furnace

A technology of guide tube and crystal pulling furnace, which is applied in the field of silicon wafer processing, and can solve the problems of reduced economic benefits, separation of components of the guide tube, and inability to replace components separately, so as to reduce the cost of use and avoid adhesion

Active Publication Date: 2022-08-02
XIAN ESWIN SILICON WAFER TECH CO LTD +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] However, at present, during the drawing process of monocrystalline silicon rods, for example, when polysilicon melt is poured into the polysilicon melt, it is very easy for the molten polysilicon melt to splash on the guide tube. After long-term use, the polysilicon melt splashed on the guide tube gradually increases, resulting in the phenomenon that the melt adheres and cannot separate the components of the guide tube, so that the components in the guide tube cannot be replaced individually, resulting in The use cost of flow tube and the production cost of monocrystalline silicon rod increase, and the economic benefit decreases

Method used

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  • A guide tube and crystal pulling furnace
  • A guide tube and crystal pulling furnace
  • A guide tube and crystal pulling furnace

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Embodiment Construction

[0021] The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention.

[0022] see figure 1 , which shows a schematic structural diagram of an exemplary crystal pulling furnace 1 used to manufacture a single crystal silicon rod by the Czochralski method. figure 1 The shown crystal pulling furnace 1 may at least include: a furnace body 10, a guide tube 11, a quartz crucible 12 containing polycrystalline silicon raw materials (or polycrystalline silicon melt), and a quartz crucible 12 for driving the movement and The rotating mechanical part 13, in addition, may also include a heater 14 for heating the polysilicon raw material to form the polysilicon melt 2, a bottom insulating material 15 provided at the bottom end of the furnace body 10, and an exhaust port duct 16, wherein the exhaust gas The exhaust direction of the port duct 16 is as ...

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Abstract

The embodiment of the present invention discloses a diversion cylinder and a crystal pulling furnace; the diversion cylinder comprises: an outer diversion cylinder formed by joining the upper part of the outer diversion cylinder and the lower part of the outer diversion cylinder at a first joint; The outer guide tube is coaxially arranged and connected to the inner guide tube; the guide tube sleeve is joined with the inner guide tube at the second joint and forms a gap with the lower part of the outer guide tube; wherein, the first A junction and / or the gap is provided to avoid sticking due to splash-filling of the polysilicon melt.

Description

technical field [0001] The embodiments of the present invention relate to the technical field of silicon wafer processing, and in particular, to a flow guiding cylinder and a crystal pulling furnace. Background technique [0002] Most of the single crystal silicon rods are produced by the Czochralski method, or called the Czochralski method, and the commonly used manufacturing equipment is a crystal pulling furnace equipment. [0003] In the pulling process of single crystal silicon ingots, the guide tube components in the crystal pulling furnace equipment play a key role in providing the temperature gradient required for crystal growth: on the one hand, the guide tube can provide a high temperature gradient for the crystal ingot. The thermal barrier effect is conducive to the heat dissipation of the crystal, forming the temperature gradient required for the crystal growth to improve the crystal growth rate; To maintain its cleanliness, it is more conducive to the heat diss...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B15/00C30B29/06
CPCC30B15/00C30B29/06
Inventor 陈凡张鹏举张千千郭超超
Owner XIAN ESWIN SILICON WAFER TECH CO LTD
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