Nano-porous structure deep ultraviolet LED device with n-AlGaN layer and manufacturing method of nano-porous structure deep ultraviolet LED device

Abstract

The invention discloses a nano-porous structure deep ultraviolet LED device with an n-AlGaN layer and a manufacturing method of the nano-porous structure deep ultraviolet LED device. The nano-porous structure deep ultraviolet LED device comprises a sapphire substrate, an AlN layer, an n-AlGaN layer, a multi-quantum well layer, a p-AlGaN layer, a p-GaN layer, a p electrode and an n electrode, wherein the n-AlGaN layer and the AlN layer are sequentially arranged on the sapphire substrate from top to bottom, the n electrode and the multi-quantum well layer are arranged on the n-AlGaN layer, the p electrode 10, the p-GaN layer, the p-AlGaN layer and the multi-quantum well layer are sequentially arranged on the n-AlGaN layer from top to bottom, and a nano-porous structure is arranged in the n-AlGaN layer, and is located under the n electrode and the multi-quantum well layer. According to the invention, the LED device and the manufacturing method thereof can effectively achieve enhancement of light extraction efficiency.

Description

technical field [0001] The invention belongs to the technical field of semiconductors, and relates to a deep ultraviolet LED device with an n-AlGaN layer nano-porous structure and a manufacturing method thereof. Background technique [0002] With the continuous development of science and technology, the role of ultraviolet light has gradually been paid attention to. The application fields of ultraviolet light include: water purification, air purification, sterilization and disinfection, etc., involving food safety, medical treatment, national defense and other fields. [0003] However, after years of research, there are still problems in the research of deep ultraviolet LEDs: so far, deep ultraviolet LEDs have not achieved a large external quantum efficiency, mainly due to low light extraction efficiency, mainly including the absorption of ultraviolet light by the p-contact layer , the total internal reflection (TIR) ​​loss of deep ultraviolet light in the multilayer struct...

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Problems solved by technology

[0003] However, after years of research, there are still problems in the research of deep ultraviolet LEDs: so far, deep ultraviolet LEDs have not achieved a large external quantum efficiency, mainly due to low light extraction efficiency, mainly including the absorption of ultraviolet light by the p-contact layer , the total internal reflection (TIR) ​​loss of deep ultraviolet light in the multilayer structure, and the unique optical polarization characteristics of deep ultraviolet LEDs, more light is in TM mode, and compared with TE mode, the light extraction efficiency of TM mode is much lower than the TE mode

However, most of these ways of extracting light extraction efficiency are to study the overall enhancement of light extraction efficiency, and do not clearly distinguish the influence of different modes of TE and TM on light extraction efficiency, and the enhancement of light extraction efficiency is limited.

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